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Product Details:
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| Chip Size: | 1 Mm2 | Encapsulation: | TO46 |
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| Response Wavelength: | 290-440 Nm | Typical Application: | UV Curing Monitoring |
| Highlight: | GaN UVC Sensor Module,UVC Sensor Module UV Curing,SIC Photodiode |
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Product Description:
GT-UVV-LW InGaN Based UV Photodiode Photovoltaic Mode Operation
Features:
General Features: l Indium Gallium Nitride Based Material
l Photovoltaic mode operation
l TO-46 metal housing
l High responsivity and low dark current
Applications: UV LED Monitoring, UV radiation dose measurement, UV Curing
Parameters Symbol Value Unit Maximum ratings
Operation temperature range Topt -25-85 oC
Storage temperature range Tsto -40-85 oC
Soldering temperature (3 s) Tsol 260 oC
Reverse voltage Vr-max -10 V
General characteristics (25 oC) Chip size A 1 mm2 Dark current (Vr = -1 V) Id
<1 nA Temperature coefficient Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 60 p>
Specifications:
| Specifications | Parameters |
| Peak wavelength | 390nm |
| Light sensitivity | 0.289A/W |
| Spectral response range (R=0.1×Rmax) | - 290-440 nm |
| UV-visible rejection ratio (Rmax/R400 nm) | - >10 |
Contact Person: Xu
Tel: 86+13352990255
