4mm2 UV Photodiode Sensor Gas Detection GS-ABC-5050XLQ GaN-Based

Product Description:

GS-ABC-5050XLQ GaN-based UV Photodiode

Features:

l UVA+UVB+UVC photodiode

l Photovoltaic mode operation

l SMD 5050 ceramic package with quartz window

l Good visible blindness

l High responsivity and low dark current

Applications: UV index monitoring, UV radiation dose measurement, flame detection Specifications: Parameters Symbol Value Unit Maximum ratings

Operation temperature range Topt -25-85 oC

Storage temperature range Tsto -40-85 oC

Soldering temperature (3 s) Tsol 260 oC

Reverse voltage Vr-max -10 V

General characteristics (25 oC) Chip size A 4 mm2 Dark current (Vr = -1 V) Id

<1 nA Temperature coefficient (@265 nm) Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 72 pF>

<1 nA Temperature coefficient (@265 nm) Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 18 p>

Specifications: