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InGaN-Based UV Photodiode Sensor Detector Curing Radiation Measurement GS-UVV-3535LCW

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InGaN-Based UV Photodiode Sensor Detector Curing Radiation Measurement GS-UVV-3535LCW

InGaN-Based UV Photodiode Sensor Detector Curing Radiation Measurement GS-UVV-3535LCW
InGaN-Based UV Photodiode Sensor Detector Curing Radiation Measurement GS-UVV-3535LCW

Large Image :  InGaN-Based UV Photodiode Sensor Detector Curing Radiation Measurement GS-UVV-3535LCW

Product Details:
Place of Origin: CHINA
Brand Name: Uv
Model Number: GS-UVV-3535LCW
Payment & Shipping Terms:
Minimum Order Quantity: 5
Packaging Details: braid
Delivery Time: 3-5work days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 1501/pcs/pre

InGaN-Based UV Photodiode Sensor Detector Curing Radiation Measurement GS-UVV-3535LCW

Description
Features: High Transparent Quartz Window, High Sensitivity, Low Dark Current Chip Size: 1 Mm2
Package: SMD 3535 Response Wavelength: 290-440 Nm
Typical Application: UV Curing Monitoring
Highlight:

InGaN-based UV Photodiode Sensor

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UV Photodiode Sensor Curing

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Photodiode UV Detector

Product Description:

GS-UVV-3535LCW InGaN-based UV Photodiode UV LED Monitoring UV Radiation Dose Measurement UV Curing

 

Features:

General Features:

l Indium Gallium Nitride Based Material

l Photovoltaic mode operation

l SMD 3535 ceramic package with quartz window

l High responsivity and low dark current

Applications: UV LED Monitoring, UV radiation dose measurement, UV Curing

Parameters Symbol Value Unit Maximum ratings

Operation temperature range Topt -25-85 oC

Storage temperature range Tsto -40-85 oC

Soldering temperature (3 s) Tsol 260 oC

Reverse voltage Vr-max -10 V

General characteristics (25 oC) Chip size A 1 mm2 Dark current (Vr = -1 V) Id <1 nA Temperature coefficient Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 60 pF> <1 nA Temperature coefficient Tc 0.065 %/ oC Capacitance (at 0 V and 1 MHz) Cp 1.7 pF>

<1 nA Temperature coefficient (@265 nm) Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 18 p>

 

Specifications:

Wavelength of peak responsivisity λ p 390 nm
Peak responsivisity (at 385 nm) Rmax 0.289 A/W
Spectral response range (R=0.1×Rmax) 290-440 nm
UV-visible rejection ratio (Rmax/R450 nm) - >10 -

InGaN-Based UV Photodiode Sensor Detector Curing Radiation Measurement GS-UVV-3535LCW 0

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Xu

Tel: 86+13352990255

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