Product Details:
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Features: | High Transparent Quartz Window, High Sensitivity, Low Dark Current | Chip Size: | 1 Mm2 |
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Package: | SMD 3535 | Response Wavelength: | 290-440 Nm |
Typical Application: | UV Curing Monitoring | ||
Highlight: | InGaN-based UV Photodiode Sensor,UV Photodiode Sensor Curing,Photodiode UV Detector |
Product Description:
GS-UVV-3535LCW InGaN-based UV Photodiode UV LED Monitoring UV Radiation Dose Measurement UV Curing
Features:
General Features:
l Indium Gallium Nitride Based Material
l Photovoltaic mode operation
l SMD 3535 ceramic package with quartz window
l High responsivity and low dark current
Applications: UV LED Monitoring, UV radiation dose measurement, UV Curing
Parameters Symbol Value Unit Maximum ratings
Operation temperature range Topt -25-85 oC
Storage temperature range Tsto -40-85 oC
Soldering temperature (3 s) Tsol 260 oC
Reverse voltage Vr-max -10 V
General characteristics (25 oC) Chip size A 1 mm2 Dark current (Vr = -1 V) Id <1 nA Temperature coefficient Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 60 pF> <1 nA Temperature coefficient Tc 0.065 %/ oC Capacitance (at 0 V and 1 MHz) Cp 1.7 pF>
<1 nA Temperature coefficient (@265 nm) Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 18 p>
Specifications:
Wavelength of peak responsivisity | λ p 390 nm |
Peak responsivisity (at 385 nm) | Rmax 0.289 A/W |
Spectral response range (R=0.1×Rmax) | 290-440 nm |
UV-visible rejection ratio (Rmax/R450 nm) | - >10 - |
Contact Person: Xu
Tel: 86+13352990255