YJJ 4ASH3-10 078-0100-000 Electrochemical Gas Sensor 0-10ppm for Semiconductor Wafer Fab MOCVD

Product Description:

YJJ 4ASH3-10 Electrochemical Gas Sensor 0-10ppm for Semiconductor Wafer Fab MOCVD

Features:

Core parameters

- Detection gas: AsH3 Arsenic Hydride
- Measurement range: 0 - 10 ppm
- Maximum overload: 10 ppm
- Sensitivity (20℃): **0.6 ± 0.2 μA/ppm**
- T90 response time: **≤ 45 s**
- Resolution: **0.01 ppm**
- Baseline (clean air at 20℃): < ±0.2 μA
- Full temperature range baseline drift (-20~50℃): equivalent < 0.5 ppm
- Bias: **0 mV, no bias required**
- Output characteristics: Linear output
- Recommended load resistance: 5 - 30 Ω

Environmental specifications

- Operating temperature: **-20 ℃ ~ +50 ℃**
- Humidity: **15% - 90% RH, no condensation**
- Pressure: 0.9 - 1.1 atm (800 - 1200 mbar)
- Orientation: no direction sensitivity

Life and storage

- Expected service life: **2 years in air**
- Long-term drift: < 2% signal/month
- Storage temperature: 10 - 30℃, sealed storage
- Sealing shelf life: original bottle sealed **6 months**
- Warranty: 12 months

Cross-interference and remarks

Arsenic hydride is highly toxic; H2S, PH3, SO2 have significant cross-interference. In semiconductor process detection scenarios, a filter and algorithm compensation need to be combined.

Typical applications

Semiconductor wafer manufacturing, epitaxial process, MOCVD equipment, special electronic gas cabinets, replacement sensor core for portable arsenic hydride toxic gas detectors, chemical special gas leakage monitoring

Specifications: