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S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector

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S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector

S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector
S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector
S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector

Large Image :  S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector

Product Details:
Place of Origin: Japan
Brand Name: Hamamatsu
Model Number: S7686
Payment & Shipping Terms:
Minimum Order Quantity: 1
Packaging Details: Tubes of
Delivery Time: 3-5work days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 911/pcs/pre

S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector

Description
Photographic Area Is: 2.8 × 2.4 Mm Number Of Pixels: 1
Refrigeration And: Non - Cooled Encapsulated: Ceramic
Encapsulate Type: With Filter (CIE)
Highlight:

S7686 IR Photoelectric Sensor

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IR Photoelectric Sensor 550 nm

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Beam Photoelectric Infrared Detector

Product Description:

S7686 Silicon Photodiode Is Used To Measure Sensitivity Close To Spectral Luminescence Efficiency

 

Features:

S7686 is a silicon photodiode whose spectral response characteristics are closer to the sensitivity (spectral luminescence efficiency) of the human eye than traditional visible light compensation sensors (S1133, etc.).

The spectral response is similar to CIE spectral luminescence efficiency

Ceramic package, high reliability

Photographic area: 2.4 × 2.8mm

High speed response: 0.5 US (VR=0 V, RL=1 kω)

Fs value: 8% typical value (vertical light incidence)

Rise time (typical value). 0.5 u s

Junction capacitance (typical value) 200 pF

Measurement condition TYP.TA =25 ℃, unless otherwise noted,Photosensitivity: λ=λp, Dark current: VR=1V, Terminal capacitance: VR=0 V, f=10 kHz

 

Specifications:

Reverse voltage (Max.) 10V
spectral response range is 480 to 660 nm
peak sensitivity wavelength (typical value) was 550 nm
Sensitivity (typical value) 0.38 A/W
Dark current (maximum) 20 pA

 

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S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector 1S7686 IR Photoelectric Sensor 550 nm , Beam Photoelectric Infrared Detector 2

 

 

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Xu

Tel: 86+13352990255

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