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Product Details:
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| Material: | Gallium Nitride Base Material | Broadband: | UVA+UVB+UVC Photodiode |
|---|---|---|---|
| Principle: | Operating In Photovoltaic Mode | Packaging: | TO-46 |
| Test Object: | Ultraviolet Detection | ||
| Highlight: | UV Photodiode Sensor GS-AB-S,GaN-Based UV Photodiode Sensor,UVA UV Photodiode |
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Product Description:
GS-AB-S GaN-based UV photodiode
Features:
Broad band UVA+UVB+UVC photodiode
Photovoltaic mode operation
TO-46metal housing
Good visible blindness
High responsivity and low dark current
UV index monitoring, UV radiation dose measurement, flame detection
Specification
| Parameters | Symbol | Value | Unit |
| Maximum ratings | |||
| Operation temperature range | Topt | -25-85 | oC |
| Storage temperature range | Tsto | -40-85 | oC |
| Soldering temperature (3 s) | Tsol | 260 | oC |
| Reverse voltage | Vr-max | -10 | V |
| General characteristics (25 oC) | |||
| Chip size | A | 1 | mm2 |
| Dark current (Vr = -1 V) | Id | <1 | nA |
| Temperature coefficient (@265 nm) | Tc | 0.05 | %/ oC |
| Capacitance (at 0 V and 1 MHz) | Cp | 18 | pF |
| Spectral response characteristics (25 oC) | |||
| Wavelength of peak responsivity | λ p | 355 | nm |
| Peak responsivity (at 355 nm) | Rmax | 0.20 | A/W |
| Spectral response range (R=0.1×Rmax) | - | 210-370 | nm |
| UV-visible rejection ratio (Rmax/R400 nm) | - | >104 | - |
Specifications:
| Specifications | Parameters |
| Peak wavelength | 355NM |
| Light sensitivity | 0.20A/W |
| Rise time | 3US |
| Test conditions | typical values, Ta=25° |
Contact Person: Xu
Tel: 86+13352990255
