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Product Details:
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| Features: | Sapphire Window, High Sensitivity, Low Dark Current | Chip Size: | 1 Mm2 |
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| Encapsulation: | TO46 | Response Wavelength Is: | 200-400 Nm |
| Highlight: | Sapphire window UV Photodiode Sensor,UV Photodiode Sensor Photocatalytic Monitor |
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Product Description:
GT-UV400-L Sapphire Window UV Photodiode Sensor For UV Photocatalytic Monitoring
Features:
General Features: l Indium Gallium Nitride Based Material l Photovoltaic mode operation l TO-46 metal housing l High responsivity and low dark current Applications: UV LED Monitoring, UV radiation dose measurement, UV Curing Specifications: Parameters Symbol Value Unit Maximum ratings Operation temperature range Topt -25-85 oC Storage temperature range Tsto -40-85 oC Soldering temperature (3 s) Tsol 260 oC Reverse voltage Vr-max -10 V General characteristics (25 oC) Chip size A 1 mm2 Dark current (Vr = -5 V) Id
<1 nA Temperature coefficient Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 60 pF >
Specifications:
| Wavelength of peak responsivisity | λ p 375 nm |
| Peak responsivisity (at 385 nm) | Rmax 0.243 A/W |
| Spectral response range (R=0.1×Rmax) | 200-400 nm |
| UV-visible rejection ratio (Rmax/R450 nm) | - >104 - |
Contact Person: Xu
Tel: 86+13352990255
