Product Details:
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Type: | Near Infrared (low Temperature Coefficient) | Light-receiving Surface: | φ0.2 Mm |
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Package: | Metal | Package Category: | TO-18 |
Highlight: | S12060-02 Avalanche Diode,Coeffi Cient Avalanche Diode,Low Temperature Avalanche Diode |
S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 nm Band
Features:
Temperature coefficient of breakdown voltage:
0.4 V/°C
High-speed response
High sensitivity and low noise
Applications:
Optical rangefinders
FSO
Optical fi ber communications
Datasheet:
Maximum sensitivity wavelength (typical) | 800 nm |
Sensitivity wavelength range | 400 to 1000 nm |
Photosensitivity (Typical) | 0.5 A/W |
Dark current (maximum) | 0.5 nA |
Cutoff Frequency (Typical) | 1000 MHz |
Junction capacitance (typical) | 1.5 pF |
Breakdown voltage (typical) | 200 V |
Temperature coefficient of breakdown voltage (typ.) | 0.4 V/°C |
Gain ratio (typical value) | 100 |
Contact Person: Xu
Tel: 86+13352990255