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S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band

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S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band

S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band
S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band

Large Image :  S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band

Product Details:
Place of Origin: China
Model Number: S12060-02
Payment & Shipping Terms:
Minimum Order Quantity: 1
Packaging Details: Standard Packing
Delivery Time: 5-8workingdays
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 1000

S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band

Description
Type: Near Infrared (low Temperature Coefficient) Light-receiving Surface: φ0.2 Mm
Package: Metal Package Category: TO-18
Highlight:

S12060-02 Avalanche Diode

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Coeffi Cient Avalanche Diode

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Low Temperature Avalanche Diode

S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 nm Band

 

Features:

Temperature coefficient of breakdown voltage:
0.4 V/°C
High-speed response
High sensitivity and low noise

 

Applications:

Optical rangefinders
FSO
Optical fi ber communications

 

Datasheet:

Maximum sensitivity wavelength (typical) 800 nm
Sensitivity wavelength range 400 to 1000 nm
Photosensitivity (Typical) 0.5 A/W
Dark current (maximum) 0.5 nA
Cutoff Frequency (Typical) 1000 MHz
Junction capacitance (typical) 1.5 pF
Breakdown voltage (typical) 200 V
Temperature coefficient of breakdown voltage (typ.) 0.4 V/°C
Gain ratio (typical value) 100

 

S12060-02 Avalanche Diode Low Temperature Coeffi Cient Type APD For 800 Nm Band 0

 

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Xu

Tel: 86+13352990255

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