S12060-02 Silicon Avalanche Photodiode Senspr Low Temperature Coeffi Cient Type APD For 800 Nm Band

Name: S12060-02 Silicon Avalanche Photodiode Senspr Low Temperature Coeffi Cient Type APD For 800 Nm Band
Brand: ShenzhenYijiajie Electronic Co., Ltd.
SKU: S12060-02
Price: 18.00 USD
Availability: InStock

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S12060-02 Silicon Avalanche Photodiode Senspr Low Temperature Coeffi Cient Type APD For 800 Nm Band

Large Image : S12060-02 Silicon Avalanche Photodiode Senspr Low Temperature Coeffi Cient Type APD For 800 Nm Band

Product Details:

Place of Origin:	China
Brand Name:	Hamamatsu
Model Number:	S12060-02

Payment & Shipping Terms:

Minimum Order Quantity:	1
Price:	Negotiable
Packaging Details:	Standard Packing
Delivery Time:	5-8workingdays
Payment Terms:	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability:	1000pcs/Month

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S12060-02 Silicon Avalanche Photodiode Senspr Low Temperature Coeffi Cient Type APD For 800 Nm Band

Description

Type:

Near Infrared (low Temperature Coefficient)

Light-receiving Surface:

φ0.2 Mm

Package:

Metal

Package Category:

TO-18

Highlight:

S12060-02 Avalanche Diode

Coeffi Cient Avalanche Diode

Low Temperature Avalanche Diode

S12060-02 Silicon Avalanche Photodiode Senspr Low Temperature Coeffi Cient Type APD For 800 Nm Band

Features:

Temperature coefficient of breakdown voltage:
0.4 V/°C
High-speed response
High sensitivity and low noise

Applications:

Optical rangefinders
FSO
Optical fi ber communications

Datasheet:

Maximum sensitivity wavelength (typical)	800 nm
Sensitivity wavelength range	400 to 1000 nm
Photosensitivity (Typical)	0.5 A/W
Dark current (maximum)	0.5 nA
Cutoff Frequency (Typical)	1000 MHz
Junction capacitance (typical)	1.5 pF
Breakdown voltage (typical)	200 V
Temperature coefficient of breakdown voltage (typ.)	0.4 V/°C
Gain ratio (typical value)	100

S12060-02 Silicon Avalanche Photodiode Senspr Low Temperature Coeffi Cient Type APD For 800 Nm Band 0

Tag:

Contact Person: Xu

Tel: 86+13352990255

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