S1337-33BR Si Photodiode For UV to IR Precision Photometry Low Capacitance

Name: S1337-33BR Si Photodiode For UV to IR Precision Photometry Low Capacitance
Brand: ShenzhenYijiajie Electronic Co., Ltd.
SKU: S1337-33BR
Price: 18.00 USD
Availability: InStock

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S1337-33BR Si Photodiode For UV to IR Precision Photometry Low Capacitance

Large Image : S1337-33BR Si Photodiode For UV to IR Precision Photometry Low Capacitance

Product Details:

Place of Origin:	Japan
Brand Name:	Hamamatsu
Model Number:	S1337-33BR

Payment & Shipping Terms:

Minimum Order Quantity:	1
Price:	Negotiable
Packaging Details:	Standard Package
Delivery Time:	3-5Workingdays
Payment Terms:	L/C, D/A, D/P, T/T, Western Union
Supply Ability:	10000pcs/Month

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S1337-33BR Si Photodiode For UV to IR Precision Photometry Low Capacitance

Description

Response Time:	1-2ms	Sensitivity:	High
Storage Temperature:	-40 To +125°C	Package Type:	SMD
Type:	Photodiode	Product Name:	UV Photodiode Sensor
Dimensions:	2.5x2.5mm	Operating Current:	10-20mA
Highlight:	S1337-33BR , Si Photodiode Analog Interface , S1337-33BR Analog Interface

S1337-33BR Si Photodiode For UV to IR Precision Photometry Low Capacitance

These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis
and the like.

Features
*High uv sensitivity: QE75% (=200 nm)
*Low capacitance

Applications
*Analytical equipment
*Optical measurement equipment

Specification:

Cooling	Non-cooled
Reverse voltage (max.)	5 V
Spectral response range	340 to 1100 nm
Peak sensitivity wavelength (typ.)	960 nm
Photosensitivity (typ.)	0.62 A/W
Dark current (max.)	30 pA
Rise time (typ.)	0.2 μs
Terminal capacitance (typ.)	65 pF
Noise equivalent power (typ.)	6.5×10-15 W/Hz1/2

S1337-33BR Si Photodiode For UV to IR Precision Photometry Low Capacitance 0

Tag:

Contact Person: Xu

Tel: 86+13352990255

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