S12060-10 Near infrared Si APD Low Temperature Coefficient Type APD for 800nm Band

Name: S12060-10 Near infrared Si APD Low Temperature Coefficient Type APD for 800nm Band
Brand: ShenzhenYijiajie Electronic Co., Ltd.
SKU: S12060-10
Price: 18.00 USD
Availability: InStock

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S12060-10 Near infrared Si APD Low Temperature Coefficient Type APD for 800nm Band

Large Image : S12060-10 Near infrared Si APD Low Temperature Coefficient Type APD for 800nm Band

Product Details:

Place of Origin:	Japan
Brand Name:	Hamamatsu
Model Number:	S12060-10

Payment & Shipping Terms:

Minimum Order Quantity:	Standard
Price:	Negotiable
Packaging Details:	Standard
Delivery Time:	3-5Workingdays
Payment Terms:	L/C, D/A, D/P, T/T, Western Union
Supply Ability:	3000/pcs/month

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S12060-10 Near infrared Si APD Low Temperature Coefficient Type APD for 800nm Band

Description

Type:	Near Infrared Type	Photosensitive Area:	φ1 Mm
Package:	Metal	Package Category:	TO-18
Peak Sensitivity Wavelength (typical):	800 Nm	Spectral Response Range:	400 To 1000 Nm
Highlight:	S12060-10 , S12060-10 Si Photodiode , Highly Sensitive Si Photodiode

S12060-10 Near infrared Si APD Low Temperature Coefficient Type APD for 800nm Band

This is an 800nm band near-infrared Si APD that can operate stably over a wide temperature range. Suitable for applications such as optical rangefinders and FSO (free space optics).

Features
- Breakdown voltage temperature coefficient: 0.4 V/℃
- High-speed response
- High sensitivity, low noise

Sensitivity (typical)	0.5 A/W
Dark current (maximum)	2 nA
Cut-off frequency (typical)	600 MHz
Terminal capacitance (typical)	6 pF
Breakdown voltage (typical)	200 V
Breakdown voltage temperature coefficient (typical)	0.4 V/°C
Gain (typical)	100

S12060-10 Near infrared Si APD Low Temperature Coefficient Type APD for 800nm Band 0

Tag:

Contact Person: Xu

Tel: 86+13352990255

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