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Product Details:
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| Type: | Near Infrared Type | Photosensitive Area: | φ1 Mm |
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| Package: | Metal | Package Category: | TO-18 |
| Peak Sensitivity Wavelength (typical): | 800 Nm | Spectral Response Range: | 400 To 1000 Nm |
| Highlight: | S12060-10,S12060-10 Si Photodiode,Highly Sensitive Si Photodiode |
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S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient
This is an 800nm band near-infrared Si APD that can operate stably over a wide temperature range. Suitable for applications such as optical rangefinders and FSO (free space optics).
Features
- Breakdown voltage temperature coefficient: 0.4 V/℃
- High-speed response
- High sensitivity, low noise
| Sensitivity (typical) | 0.5 A/W |
| Dark current (maximum) | 2 nA |
| Cut-off frequency (typical) | 600 MHz |
| Terminal capacitance (typical) | 6 pF |
| Breakdown voltage (typical) | 200 V |
| Breakdown voltage temperature coefficient (typical) | 0.4 V/°C |
| Gain (typical) | 100 |
Contact Person: Xu
Tel: 86+13352990255
