S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance

Name: S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance
Brand: ShenzhenYijiajie Electronic Co., Ltd.
SKU: S1337-33BQ
Price: 18.00 USD
Availability: InStock

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S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance

Large Image : S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance

Product Details:

Place of Origin:	Japan
Brand Name:	Hamamatsu
Model Number:	S1337-33BQ

Payment & Shipping Terms:

Minimum Order Quantity:	1
Packaging Details:	Standard Package
Delivery Time:	3-5workingdays
Payment Terms:	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability:	3000/pcs/month

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S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance

Description

Photosensitive Area:

2.4 × 2.4 Mm

Package:

Ceramic

Cooling:

Non-cooled

Reverse Voltage (max.):

5 V

Highlight:

Ultra Sensitivity UV Photodiode Sensor

Low Noise UV Photodiode Sensor

photodiode type uv sensor

S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance

These Si photodiodes have sensitivity in the Uv to near IR range. They are suitable for low-light-level detection in analysis
and the like.

Features
High uv sensitivity:QE75%(=200 nm)
Low capacitance

Applications
Analytical equipment
Optical measurement eguipment

Specification:

Spectral response range	190 to 1100 nm
Peak sensitivity wavelength (typ.)	960 nm
Photosensitivity (typ.)	0.5 A/W
Dark current (max.)	30 pA
Rise time (typ.)	0.2 μs
Terminal capacitance (typ.)	65 pF
Noise equivalent power (typ.)	8.1×10-15 W/Hz1/2

Tag:

Contact Person: Xu

Tel: 86+13352990255

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