G9212-512S In GaAs Linear Image Sensors Near Infrared Image Sensors

G9212-512S In GaAs Linear Image Sensors Near Infrared Image Sensors

The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifcally designed for near infrared multi.
channel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an
offset compensation circuit, a shift register and a timing generator formed on a CMOs chip. The charge amplifer array is
made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in
charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral range. The package is
hermetically sealed for high reliability.
Signal processing circuits on the CMOs chip can be selected from two conversion effciencies (CE) by external voltage. The
image sensor operates over a wide dynamic range when CE=16 nV/e" and delivers high gain when CE=320 nV/e~

Features
Wide dynamic range
Low noise and low dark current
Two selectable conversion efficiencies
>Anti-saturation circuit
CDS circuit*1
Offset compensation circuit
Simple operation (by built-in timing generator)*2
High resolution: 25 um pitch (512 ch)
>Low cross-talk

Applications
Near infrared multichannel spectrophotometry
Radiation thermometry
Non-destructive inspection
Related products
>InGaAs multichannel detector head C8061-01,
C8062-01
>Multichannel detector head controller C7557-01
256 ch: 1 video line
512 ch: 2 video lines

Datasheet