S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon Low Dark Current

Name: S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon Low Dark Current
Brand: ShenzhenYijiajie Electronic Co., Ltd.
SKU: S1227-33BR
Price: 18.00 USD
Availability: InStock

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S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon Low Dark Current

Large Image : S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon Low Dark Current

Product Details:

Place of Origin:	Japan
Brand Name:	Hamamatsu
Model Number:	S1227-33BR

Payment & Shipping Terms:

Minimum Order Quantity:	1
Price:	Negotiable
Packaging Details:	Standard Package
Delivery Time:	3-5Workingdays
Payment Terms:	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability:	3000PCS/Months

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S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon Low Dark Current

Description

Photosensitive Area:

2.4 × 2.4 Mm

Package:

Ceramic

Cooling:

Non-cooled

Reverse Voltage (max.):

5 V

Highlight:

UV photodiode sensor for precision photometry

silicon photodiode sensor UV to visible

S1227-33BR photodiode sensor with warranty

S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon Low Dark Current

Features
- Resin potting type
- Suppressed IR sensitivity
- Low dark current

Applications:
Analytical equipment
Optical measurement equipment, etc.

Specification:

Spectral response range	340 to 1000 nm
Peak sensitivity wavelength (typ.)	720 nm
Photosensitivity (typ.)	0.43 A/W
Dark current (max.)	5 pA
Rise time (typ.)	0.5 μs
Terminal capacitance (typ.)	160 pF
Noise equivalent power (typ.)	2.1×10-15 W/Hz1/2

S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon Low Dark Current 0

Tag:

Contact Person: Xu

Tel: 86+13352990255

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