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S2386-45k Silicon Photodiode High linearity For Visible To Near Infrared Band

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S2386-45k Silicon Photodiode High linearity For Visible To Near Infrared Band

S2386-45k Silicon Photodiode High linearity For Visible To Near Infrared Band
S2386-45k Silicon Photodiode High linearity For Visible To Near Infrared Band S2386-45k Silicon Photodiode High linearity For Visible To Near Infrared Band

Large Image :  S2386-45k Silicon Photodiode High linearity For Visible To Near Infrared Band

Product Details:
Place of Origin: Japan
Brand Name: Hamamatsu
Model Number: S2386-45k
Payment & Shipping Terms:
Minimum Order Quantity: 5
Packaging Details: Tubes of
Delivery Time: 3-5work days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 3154

S2386-45k Silicon Photodiode High linearity For Visible To Near Infrared Band

Description
Peak Sensitivity Wavelength (typical Value): 960 Nm Sensitivity (typical Value): 0.6 A/W
Dark Current (Max.): 30 PA Rise Time (typical Value.): 5.5 U S
Junction Capacitance (typical Value): 2300 PF
Highlight:

S2386-45k

,

Silicon Photodiode High linearity

The product description:

S2386-45k Silicon Photodiode Is Suitable For Visible To near Infrared Band, Universal Photometric Determination

 

Features:

Suitable for visible light to near infrared band, general photometric determination

Product features

High sensitivity in visible to near infrared bands

Low dark current

High reliability

High linearity

 

Specifications:

Sensitive area 3.9 × 4.6mm
Number of pixels 1
Refrigeration and Non - cooled
Encapsulated Metal
Encapsulation type TO-5
Reverse voltage (maximum) 30V
The spectral response range is 320 to 1100 nm

 

S2386-45k Silicon Photodiode High linearity For Visible To Near Infrared Band 0

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Xu

Tel: 86+13352990255

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