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S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

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S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity
S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

Large Image :  S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

Product Details:
Place of Origin: Japan
Brand Name: Hamamatsu
Model Number: S1226-8BQ
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: Negotiable
Packaging Details: In a box
Delivery Time: 3-5work days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 3000/pcs/pre

S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

Description
Photographic Area Is: 5.8 × 5.8mm Number Of Pixels: 1
Refrigeration And: Non - Cooled Encapsulated: Metal
Encapsulation Type Is: TO-8 Reverse Voltage (max): 5V
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S1226-8BQ Infrared Photoelectric Sensor

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Infrared Photoelectric Sensor Precision Photometry

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U Type Photoelectric Sensor

Product Description:

S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity

 

Features:

● High UV sensitivity: QE = 75% (λ=200 nm)

● Suppress NIR sensitivity

● Low dark current

● High reliability

Dark current (maximum) 20 pA

Rise time (typical value). 2 mu s

Junction capacitance (typical value) 1200 pF

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz

 

Specifications:

Reverse voltage (Max.) 5V
spectral response range is 190 to 1000 nm
peak sensitivity wavelength (typical value) was 720 nm
Type infrared photoelectricity

S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity 0

 

S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity 1

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Xu

Tel: 86+13352990255

Send your inquiry directly to us (0 / 3000)