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Product Details:
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| Photographic Area Is: | 5.8 × 5.8mm | Number Of Pixels: | 1 |
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| Refrigeration And: | Non - Cooled | Encapsulated: | Metal |
| Encapsulation Type Is: | TO-8 | Reverse Voltage (max): | 5V |
| Highlight: | S1226-8BQ Infrared Photoelectric Sensor,Infrared Photoelectric Sensor Precision Photometry,U Type Photoelectric Sensor |
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Product Description:
S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity
Features:
● High UV sensitivity: QE = 75% (λ=200 nm)
● Suppress NIR sensitivity
● Low dark current
● High reliability
Dark current (maximum) 20 pA
Rise time (typical value). 2 mu s
Junction capacitance (typical value) 1200 pF
Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| Reverse voltage (Max.) | 5V |
| spectral response range is | 190 to 1000 nm |
| peak sensitivity wavelength (typical value) was | 720 nm |
| Type | infrared photoelectricity |
Contact Person: Xu
Tel: 86+13352990255
