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Product Details:
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| Photographic Area Is: | 2.4 × 2.4 Mm | Number Of Pixels: | 1 |
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| Refrigeration And: | Non - Cooled | Encapsulated: | Metal |
| Encapsulation Type Is: | TO-5 | ||
| Highlight: | S1336-5BQ Infrared Photoelectric Sensor,Ultraviolet Infrared Photoelectric Sensor,Photoelectric Reflective Sensor |
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Product Description:
S1336-5BQ Silicon Photodiodes Are Used For Precise Photometric Determination From Ultraviolet To Near Infrared
Features:
Suitable for precise photometric determination from ultraviolet to near infrared
features
● High sensitivity in ultraviolet band
Low low capacitance
● High reliability
Rise time (typical value). 0.2 u s
Junction capacitance (typical value) 65 pF
Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| Reverse voltage (Max.) | 5V |
| spectral response range is | 190 to 1100 nm |
| Peak sensitivity wavelength (typical value) | 960 nm |
| Sensitivity (typical value) | 0.5 A/W |
| Dark current (maximum) | 30 pA |
Contact Person: Xu
Tel: 86+13352990255
