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Product Details:
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| Photographic Area Is: | 2.4 × 2.4 Mm | Number Of Pixels: | 1 |
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| Refrigeration: | Non - Cooled | Encapsulated: | Metal |
| Encapsulation Type Is: | TO-5 | Reverse Voltage (max): | 30V |
| Highlight: | S2386-5K Infrared Photoelectric Sensor,Infrared Photoelectric Sensor 30 V,Silicon Photodiode Sensor |
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Product Description:
S2386-5K Silicon Photodiode Sensor Infrared Photoelectric Sensor 30 V Universal Geberal Purpose Photometry
Features:
Suitable for visible light to near infrared band, universal photometric determination
Product features
● High sensitivity in visible to near infrared band
● Low dark current
● High reliability
● High linearity
Measurement condition TYP.TA =25 ℃, Unless otherwise noted,Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| Reverse voltage (Max.) | 30 V |
| spectral response range is | 320 to 1100 nm |
| Peak sensitivity wavelength (typical value) | 960 nm |
| Sensitivity (typical value) | 0.6 A/W |
| Dark current (maximum) | 5 pA |
| Rise time (typical value). | 1.8 u s |
| Junction capacitance (typical value) | 730 pF |
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Contact Person: Xu
Tel: 86+13352990255