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S8746-01 Preamplifiers Infrared Photoelectric Sensor , Integrated Resistor Silicon Pin Photodiode

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S8746-01 Preamplifiers Infrared Photoelectric Sensor , Integrated Resistor Silicon Pin Photodiode

S8746-01 Preamplifiers Infrared Photoelectric Sensor , Integrated Resistor Silicon Pin Photodiode
S8746-01 Preamplifiers Infrared Photoelectric Sensor , Integrated Resistor Silicon Pin Photodiode

Large Image :  S8746-01 Preamplifiers Infrared Photoelectric Sensor , Integrated Resistor Silicon Pin Photodiode

Product Details:
Place of Origin: Japan
Brand Name: Hamamatsu
Model Number: S8746-01
Payment & Shipping Terms:
Minimum Order Quantity: 1
Packaging Details: In a box
Delivery Time: 3-5work days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 311/pcs/pre

S8746-01 Preamplifiers Infrared Photoelectric Sensor , Integrated Resistor Silicon Pin Photodiode

Description
Photographic Area Is: 5.8 × 5.8mm Number Of Pixels: 1
Refrigeration And: Non - Cooled Encapsulated: Metal
Material: Metallic
Highlight:

S8746-01 Infrared Photoelectric Sensor

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Preamplifiers Infrared Photoelectric Sensor

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Integrated Resistor Silicon Pin Photodiode

Product Description:

S8746-01 Silicon Photodiodes With Integrated Resistors And Capacitors And Preamplifiers

 

Features:

A photodiode with integrated feedback resistors and capacitors for preamplifiers

S8746-01 is a low-noise sensor composed of photodiodes, operational amplifiers, feedback resistors and capacitors, all packaged in a very small package. When connected to a power source, it can be used for weak light measurements, such as analysis devices or measuring devices. Its light sensitive surface is connected to the GND end, so that it can suppress EMC noise very high.

Product features

● Suitable for precise photometric determination from ultraviolet to near infrared

● Small metal package with quartz window: TO-8

● Photosensitive area: 5.8×5.8 mm

● Built-in Rf=1 Gω Cf=5 pF

● Low power FET input op-amp

Low noise, low NEP

● External resistance to achieve variable gain

● Package with shielding function

● EMC noise resistance

 

Specifications:

Reverse voltage (Max.) 20 V
spectral response range is 190 to 1100 nm
Peak sensitivity wavelength (typical value) 960 nm
Noise equivalent power (typical value) 15×10-15 W/Hz1/2
Measurement conditions Typ. Ta=25 ℃, F =10Hz, λ=λp, unless otherwise noted

 

S8746-01 Preamplifiers Infrared Photoelectric Sensor , Integrated Resistor Silicon Pin Photodiode 0

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S8746-01 Preamplifiers Infrared Photoelectric Sensor , Integrated Resistor Silicon Pin Photodiode 2

 

 

 

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Xu

Tel: 86+13352990255

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