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Product Details:
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| Photosensitive Area: | Diameter 0.2mm | Reverse Voltage: | 0 To VBR |
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| Sealing Material: | Silicone Resin | Dperating Temperature: | -40 To +105℃ |
| Supply Voltage: | 4.0V | Package: | Glass Epoxy |
| Highlight: | Silicone Resin Infrared Photoelectric Sensor,Sealed Infrared Photoelectric Sensor,S16429-01CT Infrared Photoelectric Sensor |
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S16429-01CT Photosensor With Front End IC Built In Gain Stabilized APD
Features
- Stable gain against temperature fluctuations
- No gain adjustment according to individual differences required
- Built-in high-speed transimpedance amplifier: 300 MHz
- Low noise
- No ringing
Specification:
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Package
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Glass epoxy |
| Number of channel | 1 ch |
| Photosensitive area/ch | φ0.2 mm |
| Spectral response range | 400 to 1100 nm |
| Peak sensitivity wavelength | 840 nm |
| Photosensitivity | 0.5 A/W |
| High Band Cut-off Frequency | 300 MHz |
| Note | Photosensitivity: λ=905 nm, M=1 |
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Contact Person: Xu
Tel: 86+13352990255