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S16429-01CT Photosensor With Front End IC Built In Gain Stabilized APD

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S16429-01CT Photosensor With Front End IC Built In Gain Stabilized APD

S16429-01CT Photosensor With Front End IC Built In Gain Stabilized APD
S16429-01CT Photosensor With Front End IC Built In Gain Stabilized APD

Large Image :  S16429-01CT Photosensor With Front End IC Built In Gain Stabilized APD

Product Details:
Place of Origin: Japan
Brand Name: Hamamastu
Model Number: S16429-01CT
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: Negotiable
Packaging Details: Standard Package
Delivery Time: 3-5workingdays
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 5000pcs/Month

S16429-01CT Photosensor With Front End IC Built In Gain Stabilized APD

Description
Photosensitive Area: Diameter 0.2mm Reverse Voltage: 0 To VBR
Sealing Material: Silicone Resin Dperating Temperature: -40 To +105℃
Supply Voltage: 4.0V Package: Glass Epoxy
Highlight:

Silicone Resin Infrared Photoelectric Sensor

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Sealed Infrared Photoelectric Sensor

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S16429-01CT Infrared Photoelectric Sensor

S16429-01CT Photosensor With Front End IC Built In Gain Stabilized APD

 

Features
- Stable gain against temperature fluctuations
- No gain adjustment according to individual differences required
- Built-in high-speed transimpedance amplifier: 300 MHz
- Low noise
- No ringing

 

Specification:

Package
Glass epoxy
Number of channel 1 ch
Photosensitive area/ch φ0.2 mm
Spectral response range 400 to 1100 nm
Peak sensitivity wavelength 840 nm
Photosensitivity 0.5 A/W
High Band Cut-off Frequency 300 MHz
Note Photosensitivity: λ=905 nm, M=1

 

 

S16429-01CT Photosensor With Front End IC Built In Gain Stabilized APD 0

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Xu

Tel: 86+13352990255

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