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S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band

Name: S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band
Brand: ShenzhenYijiajie Electronic Co., Ltd.
SKU: S1337-66BQ
Price: 18.00 USD
Availability: InStock

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S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band

Large Image : S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band

Product Details:

Place of Origin:	Japan
Brand Name:	Hamamatsu
Model Number:	S1337-66BQ

Payment & Shipping Terms:

Minimum Order Quantity:	1
Packaging Details:	Tubes of
Delivery Time:	3-5work days
Payment Terms:	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability:	311/pcs/pre

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S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band

Description

Photographic Area Is:	5.8 × 5.8mm	Number Of Pixels:	1
Refrigeration And:	Non - Cooled	Encapsulated:	Ceramic
Reverse Voltage (Max.):	5V	Spectral Response Range Is:	190 To 1100 Nm
Highlight:	S1337-66BQ , Infrared Silicon Photodetector

Product Description:

S1337-66BQ Infrared Silicon Photodiode Is Used For Precise Photometric Determination In Ultraviolet To Infrared Band

Features:

Suitable for precise photometric determination from ultraviolet to infrared band

High UV sensitivity: QE = 75% (λ=200 nm)

Low capacitance

Measurement conditions: Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

Peak sensitivity wavelength (typical value)	960 nm
Sensitivity (typical value)	0.5 A/W
Dark current (maximum)	100 pA
Rise time (typical value)	1 mu s
Junction capacitance (typical value)	380 pF

S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band 0

S1337-66BQ Infrared Silicon Photodetector In Ultraviolet To Infrared Band 1

Tag:

Contact Person: Xu

Tel: 86+13352990255

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