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Product Details:
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| Photographic Area Is: | 10 × 10 Mm | Number Of Pixels: | 1 |
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| Refrigeration And: | Non - Cooled | Encapsulated: | Ceramic |
| Reverse Voltage (Max.): | 5 V | Spectral Response Range Is190 To 1100: | 190 To 1100 Nm |
| Highlight: | S1337-1010BQ,Large Area Avalanche Photodiode |
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Product Description:
S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance
Features:
Suitable for precise photometric determination from ultraviolet to red band
Product features
High UV sensitivity: QE = 75% (λ=200 nm)
Low capacitance
Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| Peak sensitivity wavelength (typical value) | 960 nm |
| Sensitivity (typical value) | 0.5 A/W |
| Dark current (maximum) | 200 pA |
| Rise time (typical value) | 3 mu s |
| Junction capacitance (typical value) |
1100 pF
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Contact Person: Xu
Tel: 86+13352990255
