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S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

Name: S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance
Brand: ShenzhenYijiajie Electronic Co., Ltd.
SKU: S1337-1010BQ
Price: 18.00 USD
Availability: InStock

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S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

Large Image : S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

Product Details:

Place of Origin:	Japan
Brand Name:	Hamamatsu
Model Number:	S1337-1010BQ

Payment & Shipping Terms:

Minimum Order Quantity:	1
Price:	Negotiable
Packaging Details:	Standard Packing
Delivery Time:	3-5work days
Payment Terms:	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability:	1000pcs/Month

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S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

Description

Photographic Area Is:	10 × 10 Mm	Number Of Pixels:	1
Refrigeration And:	Non - Cooled	Encapsulated:	Ceramic
Reverse Voltage (Max.):	5 V	Spectral Response Range Is190 To 1100:	190 To 1100 Nm
Highlight:	S1337-1010BQ , Large Area Avalanche Photodiode

Product Description:

S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

Features:

Suitable for precise photometric determination from ultraviolet to red band

Product features

High UV sensitivity: QE = 75% (λ=200 nm)

Low capacitance

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

Peak sensitivity wavelength (typical value)	960 nm
Sensitivity (typical value)	0.5 A/W
Dark current (maximum)	200 pA
Rise time (typical value)	3 mu s
Junction capacitance (typical value)	1100 pF

S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance 0

S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance 1

Tag:

Contact Person: Xu

Tel: 86+13352990255

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