S2387-66R Silicon Photodiode For Visible to IR Low Dark Current For Analytical Equipment

Product Description:

S2387-66R Silicon Photodiode For Visible to IR Low Dark Current For Analytical Equipment

Features:

Large area high speed silicon PIN photodiode

The S2387-66R has a large photosensitive area, but has excellent frequency response at 40 MHz. This diode is suitable for FSO(free space Optics) and high speed pulsed light detection.

Product features

Photosensitive area: φ5.0mm

Cut-off frequency: 40 MHz (VR=24 V)

High reliability: TO-8 metal package

Measurement conditions Ta=25 ℃, Typ., Photosensitivity: λ=780 nm, Dark current: VR=24 V, Cutoff frequency: VR=24 V, Terminal capacitance: VR=24 V, F =1 MHz, λ=λp, Noise equivalent power: VR=24 V, λ=λp, unless otherwise noted

Specifications: