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Product Details:
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| Photographic Area Is: | 2.8 × 2.4 Mm | Number Of Pixels: | 1 |
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| Refrigeration And: | Non - Cooled | Encapsulated: | Ceramic |
| Highlight: | S7686 IR Photoelectric Sensor,IR Photoelectric Sensor 550 nm,Beam Photoelectric Infrared Detector |
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Product Description:
S7686 SI Photodiode Sensor With Sensitivity Close To Spectral Luminous Efficiency
Features:
S7686 is a silicon photodiode whose spectral response characteristics are closer to the sensitivity (spectral luminescence efficiency) of the human eye than traditional visible light compensation sensors (S1133, etc.).
The spectral response is similar to CIE spectral luminescence efficiency
Ceramic package, high reliability
Photographic area: 2.4 × 2.8mm
High speed response: 0.5 US (VR=0 V, RL=1 kω)
Fs value: 8% typical value (vertical light incidence)
Rise time (typical value). 0.5 u s
Junction capacitance (typical value) 200 pF
Measurement condition TYP.TA =25 ℃, unless otherwise noted,Photosensitivity: λ=λp, Dark current: VR=1V, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| Reverse voltage (Max.) | 10V |
| spectral response range is | 480 to 660 nm |
| peak sensitivity wavelength (typical value) was | 550 nm |
| Sensitivity (typical value) | 0.38 A/W |
| Dark current (maximum) | 20 pA |
Contact Person: Xu
Tel: 86+13352990255
