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S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry

Name: S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry
Brand: ShenzhenYijiajie Electronic Co., Ltd.
SKU: S1336-5BQ
Price: 18.00 USD
Availability: InStock

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S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry

Large Image : S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry

Product Details:

Place of Origin:	Japan
Brand Name:	Hamamatsu
Model Number:	S1336-5BQ

Payment & Shipping Terms:

Minimum Order Quantity:	1
Price:	Negotiable
Packaging Details:	Tube
Delivery Time:	3-5work days
Payment Terms:	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability:	2000pcs/Month

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S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry

Description

Photographic Area Is:

2.4 × 2.4 Mm

Refrigeration And:

Non - Cooled

Encapsulated:

Metal

Encapsulation Type Is:

TO-5

Highlight:

S1336-5BQ Infrared Photoelectric Sensor

Ultraviolet Infrared Photoelectric Sensor

Photoelectric Reflective Sensor

Product Description:

S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry

Features:

Suitable for precise photometric determination from ultraviolet to near infrared

features

● High sensitivity in ultraviolet band

Low low capacitance

● High reliability

Rise time (typical value). 0.2 u s

Junction capacitance (typical value) 65 pF

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

Reverse voltage (Max.)	5V
spectral response range is	190 to 1100 nm
Peak sensitivity wavelength (typical value)	960 nm
Sensitivity (typical value)	0.5 A/W
Dark current (maximum)	30 pA

S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry 0

Tag:

Contact Person: Xu

Tel: 86+13352990255

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