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Product Details:
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| Photographic Area Is: | 5.8 × 5.8mm | Number Of Pixels: | 1 |
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| Refrigeration And: | Non - Cooled | Encapsulation Type Is: | To-8 |
| Reverse Voltage (Max.): | 30V | Spectral Response Range: | 320 To 1100 Nm |
| Highlight: | S2386-8K Infrared Photoelectric Sensor,Infrared Photoelectric Sensor 10 mV,Silicon Carbide Photodiode |
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Product Description:
S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current
Features:
Suitable for visible light to near infrared band, universal photometric determination
Product features
● High sensitivity in visible to near infrared band
● Low dark current
● High reliability
● High linearity
Rise time (typical value). 10 mu s
Junction capacitance (typical value) 4300 pF
Measurement condition TYP.TA =25 ℃, Unless otherwise noted,Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| spectral response range is | 320 to 1100 nm |
| Peak sensitivity wavelength (typical value) | 960 nm |
| Sensitivity (typical value) | 0.6 A/W |
| Dark current (Max.) | 50 pA |
Contact Person: Xu
Tel: 86+13352990255
