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Product Details:
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| Receiving Surface: | 2.4 × 2.8mm | Package: | Plastic |
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| Packaging: | Plastics | Heat Dissipation: | Non-cooling Type |
| Highlight: | S6931 01 Infrared Photoelectric Sensor,0.5μs Infrared Photoelectric Sensor,S6931 01 Silicon Photodiode |
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S6931-01 Silicon Photodiode Photodiode Molded Into Clear Plastic Package
Features:
Detailed parameter
Receiving surface 2.4 × 2.8mm
The pixel number is 1
Packaging plastics
Cooling non-cooling type
Reverse voltage (Max.) 10 V
Sensitivity wavelength range 320 to 1000 nm
Maximum sensitivity wavelength (typical value) 720 nm
Photosensitivity (typical value) 0.48A /W
Dark current (Max.) 20 pA
Rise time (typical value) 0.5μs
Junction capacitance (typical value) 200 pF
Typical values Ta=25°C, sensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated
Specifications:
| Dark current (Max.) | 10V |
| Operating temperature | Topr |
| Storage temperature | Tstg |
| Center wavelength | CWL |
| Photosensitivity | λ=254 nm |
Contact Person: Xu
Tel: 86+13352990255
