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Product Details:
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| Photosensitive Area: | 2.8 × 2.4 Mm | Packaging: | Plastic |
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| Cooling: | Uncooled | Spectral Response Range: | 320 To 1000 Nm |
| Peak Sensitivity Wavelength (typical): | 720 Nm | Sensitivity (typical): | 0.4 A/W |
| Highlight: | S16765 01MS Infrared Photoelectric Sensor,2.8mm Infrared Photoelectric Sensor,S16765 01MS Photodiode PIN Silicon Photocell |
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S16765-01MS Silicon Photodiode Low Dark Current Pre Molded Package
Features:
Hamamatsu photosensitive photodiode silicon photocell
High performance, High reliability Si PIN photodiodes
High performance, high reliability silicon PIN photodiode
Parameter name value
Encapsulated ceramic
Sensitive zone diameter/length mm 2.8
The minimum wavelength is 320 nm
The maximum wavelength is 730 nm
The peak wavelength is 560 nm
Peak sensitivity A/W 0.3
Maximum dark current (nA) 0.01
Rsh Ω (G) 100
TR (us) 2.5
CT (pF) 700
Part of the photodetector covers common photodiodes, avalanche diodes, and photomultiplier tubes that form from x-rays to ultraviolet, visible light
, near infrared, up to 3000nm in the middle infrared band;Package form from Chip Level to Components Level, Module
Level of various semiconductor laser diodes
Professional sales of Japan hamamatsu optoelectronic devices, optical reception, silicon photodiode, photoelectric detection devices optical detection components
Specifications:
| Welding temperature | 260℃ |
| Light source power | 0.1u~100mW/cm² |
| Spectral detection range | 25℃, 10% of R |
| Reverse voltage | 3V |
Contact Person: Xu
Tel: 86+13352990255
