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YJJ S3071 large Area High Speed Silicon PIN Photodiode

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YJJ S3071 large Area High Speed Silicon PIN Photodiode

YJJ S3071 large Area High Speed Silicon PIN Photodiode
YJJ S3071 large Area High Speed Silicon PIN Photodiode YJJ S3071 large Area High Speed Silicon PIN Photodiode YJJ S3071 large Area High Speed Silicon PIN Photodiode YJJ S3071 large Area High Speed Silicon PIN Photodiode YJJ S3071 large Area High Speed Silicon PIN Photodiode YJJ S3071 large Area High Speed Silicon PIN Photodiode

Large Image :  YJJ S3071 large Area High Speed Silicon PIN Photodiode

Product Details:
Place of Origin: Japan
Brand Name: HAMAMATSU
Model Number: S3071
Payment & Shipping Terms:
Minimum Order Quantity: 1
Packaging Details: piping
Delivery Time: 3 days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2200

YJJ S3071 large Area High Speed Silicon PIN Photodiode

Description
Receiving Surface: φ5.0mm Encapsulation: Metal
Package Category: TO-8 Refrigeration: Uncooled Type
Highlight:

large Area Silicon PIN Photodiode

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High Speed Silicon PIN Photodiode

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YJJ S3071 Silicon PIN Photodiode

Product Description:

S3071 large Area High Speed Silicon PIN Photodiode

 

Features:

Large area high speed silicon PIN photodiode

The S3071 is a silicon PIN photodiode with a relatively large light-receiving surface, but provides excellent frequency response at 40 MHz. This photodiode is suitable for spatial light transmission (free space optical elements) and high-speed pulsed light detection.

peculiarity

- Receiving surface size: φ5.0mm

- Cut-off frequency: 40 MHz (VR=24 V)

- High reliability: TO-8 metal package

Receiving surface φ5.0mm
Encapsulation metal
Package category TO-8
Refrigeration uncooled type
Reverse voltage (Max.) 50 V
Spectral response range 320 to 1060 nm
Maximum sensitivity wavelength (typical value) 920 nm
Photosensitivity (typical value) 0.54 A/W
Dark current (Max.) 10000 pA
Cut-off frequency (typical value) 40 MHz
Junction capacitance (typical) 18 pF
Noise equivalent power (typical value) 2.1×10-14 W/Hz1/2
Measurement conditions Ta = 25°C, typical value, sensitivity: λ = 780 nm, dark current: VR = 24 V, cutoff frequency: VR = 24 V, junction capacitance: VR = 24 V, f = 1 MHz, λ = λp, noise equivalent power: VR = 24 V, λ = λp, unless otherwise noted

Specifications:

Reverse voltage (Max.) 50 V
Spectral response range 320 to 1060 nm
Maximum sensitivity wavelength (typical value) 920 nm
Photosensitivity (typical value) 0.54 A/W

 

YJJ S3071 large Area High Speed Silicon PIN Photodiode 0

 

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Miss. Xu

Tel: 86+13352990255

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