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Product Details:
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| Coefficient: | 0.4V /°C | Package Category: | TO18 |
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| Maximum Sensitivity Wavelength (typical Value): | 800 Nm | Dark Current (Max.): | 2 NA |
| Highlight: | Low Temperature Coefficient Silicon APD,800 nm Band Silicon APD |
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Product Description:
S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band
Features:
Low temperature coefficient for 800 nm band
This is an 800 nm near-infrared silicon APD for stable operation over a wide temperature range. This is suitable for applications such as light wave distance meters and spatial light transmission (free space optics).
peculiarity
- Breakdown voltage temperature coefficient: 0.4V /°C
- High speed response
- High sensitivity and low noise
Type Near infrared type
(Low temperature coefficient)
Receiving surface φ1mm
Encapsulation metal
Package category TO-18
Maximum sensitivity wavelength (typical value) 800 nm
Sensitivity wavelength range 400 to 1000 nm
Photosensitivity (typical value) 0.5A /W
Dark current (Max.) 2 nA
Cut-off frequency (typical value) 600 MHz
Junction capacitance (typical) 6 pF
Breakdown voltage (typical value) 200 V
Breakdown voltage temperature coefficient (typical value) 0.4 V/°C
Gain rate (typical value) 100
Measurement conditions Typical value Ta = 25°C, unless otherwise stated,
Sensitivity: λ = 800 nm, M = 1
Specifications:
| Reverse voltage (Max.) | 5 V |
| Spectral response range | 400 to 1000 nm |
| Maximum sensitivity wavelength (typical value) | 800 nm |
| Photosensitivity (typical value) | 0.5A /W |
Contact Person: Miss. Xu
Tel: 86+13352990255
