|
Product Details:
|
| Receiving Surface: | φ0.2mm | Encapsulation: | Metal |
|---|---|---|---|
| Package Category: | TO18 | Maximum Sensitivity Wavelength (typical Value): | 800 Nm |
| Highlight: | Low Temperature Coefficient Silicon APD,800 nm Band Silicon APD,Metal Encapsulation Silicon APD |
||
Product Description:
S12060-02 Silicon APD Low Temperature Coefficient For 800 nm Band
Features:
Low temperature coefficient for 800 nm band
This is an 800 nm near-infrared silicon APD for stable operation over a wide temperature range. This is suitable for applications such as light wave distance meters and spatial light transmission (free space optics).
peculiarity
- Breakdown voltage temperature coefficient: 0.4V /°C
- High speed response
- High sensitivity and low noise
Type Near infrared type
(Low temperature coefficient)
Receiving surface φ1mm
Encapsulation metal
Package category TO-18
Maximum sensitivity wavelength (typical value) 800 nm
Sensitivity wavelength range 400 to 1000 nm
Photosensitivity (typical value) 0.5A /W
Dark current (Max.) 2 nA
Cut-off frequency (typical value) 600 MHz
Junction capacitance (typical) 6 pF
Breakdown voltage (typical value) 200 V
Breakdown voltage temperature coefficient (typical value) 0.4 V/°C
Gain rate (typical value) 100
Measurement conditions Typical value Ta = 25°C, unless otherwise stated,
Sensitivity: λ = 800 nm, M = 1
Specifications:
| Reverse voltage (Max.) | 5 V |
| Spectral response range | 400 to 1000 nm |
| Maximum sensitivity wavelength (typical value) | 800 nm |
| Photosensitivity (typical value) | 0.5A /W |
Contact Person: Miss. Xu
Tel: 86+13352990255
