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YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band

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YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band

YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band
YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band

Large Image :  YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band

Product Details:
Place of Origin: Japan
Brand Name: HAMAMATSU
Model Number: S6931-01
Payment & Shipping Terms:
Minimum Order Quantity: 1
Packaging Details: piping
Delivery Time: 3 days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2200

YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band

Description
Heat Dissipation: Uncooled Type Reverse Voltage (Max.): 10V
Sensitivity Wavelength Range: 320 To 1000 Nm Maximum Sensitivity Wavelength (typical Value): 720 Nm
Highlight:

Visible Silicon Photodiode

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Transparent Plastic Package Silicon Photodiode

Product Description:

S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band

 

Features:

Silicon photodiode molded into a transparent plastic package

peculiarity

- Visible to near infrared band (suppressed infrared sensitivity type)

Detailed parameter

Receiving surface 2.4 × 2.8 mm

Encapsulation plastic

Package category --

Heat dissipation uncooled type

Reverse voltage (Max.) 10 V

Sensitivity wavelength range 320 to 1000 nm

Maximum sensitivity wavelength (typical value) 720 nm

Photosensitivity (typical value) 0.48 A/W

Dark current (Max.) 20 pA

Rise time (typical value) 0.5μs

Junction capacitance (typical value) 200 pF

Typical values of measurement conditions Ta=25°C, photosensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated

Spectral sensitivity characteristic

 

Specifications:

Photosensitivity (typical value) 0.48 A/W
Dark current (Max.) 20 pA
Rise time (typical value) 0.5μs
Junction capacitance (typical value) 200 pF

 

YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band 0

 

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Miss. Xu

Tel: 86+13352990255

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