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Product Details:
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| Photosensitivity (typical Value): | 0.45A /W | Dark Current (Max.): | 200 PA |
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| Cut-off Frequency (typical Value): | 20 MHz | Junction Capacitance (typical): | 25 PF |
| Highlight: | Infrared Silicon Photodiode,General Purpose Silicon Photodiode |
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Product Description:
S2387-66R Silicon Photodiode Is Suitable For General Purpose Photometers In The Visible To Infrared Band
Features:
Four pixel silicon PIN photodiode
The S2387-66R is a four-pixel silicon PIN photodiode with sensitivity in the ultraviolet to near-infrared spectrum. The four-pixel format supports position sensing, for example for laser beam alignment.
peculiarity
- Four (2 × 2) pixel format
- Low crosstalk: maximum 2%
- Wide spectral response range: 190 to 1000 nm
- High-speed response: fc = 20 MHz
-TO-5 metal package
The number of pixels is 4 segments
Encapsulation metal
Package category TO-5
Refrigeration uncooled type
Sensitivity wavelength range 190 to 1000 nm
Maximum sensitivity wavelength (typical value) 720 nm
Photosensitivity (typical value) 0.45A /W
Dark current (Max.) 200 pA
Cut-off frequency (typical value) 20 MHz
Junction capacitance (typical) 25 pF
Measurement conditions Typical value Ta = 25°C, unless otherwise stated,
For each pixel (except the light-receiving surface), sensitivity: λ = λp, dark current: VR = 5V, cut-off frequency: VR = 5V, junction capacitance: VR = 5V, f = 1MHz
Specifications:
| Photosensitivity (typical value) | 0.45A/W |
| Dark current (Max.) | 200 pA |
| Rise time (typical value) | 2μs |
| Junction capacitance (typical value) | 25 pF |
Contact Person: Miss. Xu
Tel: 86+13352990255
