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Product Details:
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| High UV Sensitivity: | QE 75% (λ=200 Nm) | Receiving Surface: | 5.8 × 5.8 Mm |
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| Reverse Voltage (Max.): | 5V | Rise Time (typical Value): | 1 μs |
| Highlight: | Ultraviolet Silicon Photodiode,Precision Silicon Photodiode |
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Product Description:
S1337-66BQ Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands
Features:
Suitable for precise photometry in ultraviolet to infrared bands
peculiarity
- High UV sensitivity: QE 75% (λ=200 nm)
- Low capacitance
Receiving surface 5.8 × 5.8 mm
Encapsulated ceramics
Package category --
Refrigeration uncooled type
Reverse voltage (Max.) 5 V
Spectral response range 190 to 1100 nm
Maximum sensitivity wavelength (typical value) 960 nm
Photosensitivity (typical value) 0.5A /W
Dark current (Max.) 100 pA
Rise time (typical value) 1 μs
Junction capacitance (typical) 380 pF
Noise equivalent power (typical value) 1.3×10-14 W/Hz1/2
Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated
Specifications:
| Spectral response range | 190 to 1100 nm |
| Maximum sensitivity wavelength (typical value) | 960 nm |
| Photosensitivity (typical value) | 0.5A /W |
| Dark current (Max.) | 100 pA |
Contact Person: Miss. Xu
Tel: 86+13352990255
