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YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

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YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands
YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

Large Image :  YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

Product Details:
Place of Origin: Japan
Brand Name: HAMAMATSU
Model Number: S1337-66BR
Payment & Shipping Terms:
Minimum Order Quantity: 1
Packaging Details: boxed
Delivery Time: 3 days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2200

YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

Description
Receiving Surface: 5.8 × 5.8 Mm Reverse Voltage (Max.): 5V
Photosensitivity (typical Value): 0.62 A/W Dark Current (Max.): 100 PA
Highlight:

Precision Photometry Silicon Photodiode

Product Description:

S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

 

Features:

Suitable for precise photometry in ultraviolet to infrared bands

Receiving surface 5.8 × 5.8 mm

Encapsulated ceramics

Package category --

Refrigeration uncooled type

Reverse voltage (Max.) 5 V

Spectral response range 340 to 1100 nm

Maximum sensitivity wavelength (typical value) 960 nm

Photosensitivity (typical value) 0.62 A/W

Dark current (Max.) 100 pA

Rise time (typical value) 1 μs

Junction capacitance (typical) 380 pF

Noise equivalent power (typical value) 1.0×10-14 W/Hz1/2

Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated

 

Specifications:

Spectral response range 340 to 1100 nm
Maximum sensitivity wavelength (typical value) 960 nm
Photosensitivity (typical value) 0.5A /W
Dark current (Max.) 100 pA

 

YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands 0

 

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Miss. Xu

Tel: 86+13352990255

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