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YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands

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YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands

YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands
YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands

Large Image :  YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands

Product Details:
Place of Origin: Japan
Brand Name: HAMAMATSU
Model Number: S1336-18BQ
Payment & Shipping Terms:
Minimum Order Quantity: 1
Packaging Details: boxed
Delivery Time: 3 days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2200

YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands

Description
Receiving Surface: 1.1 × 1.1 Mm Package: Metal
Package Category: TO-18 Reverse Voltage (Max.): 5V
Highlight:

UV Silicon Photodiode

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1.1 × 1.1 mm Silicon Photodiode

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Precision Photometry Silicon Photodiode

Product Description:

S1336-18BQ Is Suitable For Precision Photometry In The Ultraviolet To Infrared Band Silicon Photodiodes Photodiodes

 

Features:

Suitable for precise photometry in ultraviolet to near-infrared bands

peculiarity

- High sensitivity in UV band

- Low capacitance

- High reliability

Receiving surface 1.1 × 1.1 mm

Encapsulation metal

Package category TO-18

Refrigeration uncooled type

Reverse voltage (Max.) 5 V

Spectral response range 190 to 1100 nm

Maximum sensitivity wavelength (typical value) 960 nm

Photosensitivity (typical value) 0.5A /W

Dark current (Max.) 20 pA

Rise time (typical value) 0.1μs

Junction capacitance (typical) 20 pF

Noise equivalent power (typical value) 5.7×10-15 W/Hz1/2

Measurement conditions Typical value Ta = 25°C, unless otherwise stated,

Sensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz

 

Specifications:

Spectral response range 190 to 1100 nm
Maximum sensitivity wavelength (typical value) 960 nm
Photosensitivity (typical value) 0.5A /W
Dark current (Max.) 20 pA

 

YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands 0

 

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Miss. Xu

Tel: 86+13352990255

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