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Product Details:
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| Photosensitivity (typical Value): | 0.5A /W | Dark Current (Max.): | 50 PA |
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| Rise Time (typical Value): | 0.2μs | Junction Capacitance (typical): | 65 PF |
| Highlight: | Low Capacitance Silicon Photodiode |
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Product Description:
S1337-16BQ Low Capacitance Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands
Features:
Receiving surface 5.9 × 1.1mm
Encapsulated ceramics
Package category --
Refrigeration uncooled type
Reverse voltage (Max.) 5 V
Spectral response range 190 to 1100 nm
Maximum sensitivity wavelength (typical value) 960 nm
Photosensitivity (typical value) 0.5A /W
Dark current (Max.) 50 pA
Rise time (typical value) 0.2μs
Junction capacitance (typical) 65 pF
Noise equivalent power (typical value) 1.0×10-14 W/Hz1/2
Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated
Specifications:
| Spectral response range | 190 to 1100 nm |
| Maximum sensitivity wavelength (typical value) | 960 nm |
| Photosensitivity (typical value) | 0.5A /W |
| Dark current (Max.) | 50 pA |
Contact Person: Miss. Xu
Tel: 86+13352990255
