Product Details:
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Light-receiving Side: | 5.8 × 5.8 Mm | Encapsulation: | Ceramics |
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Refrigeration: | Non-cooled | Reverse Voltage (max): | 5 V |
Spectral Response Range: | 340 To 1100 Nm | Dark Current (max): | 100 PA |
Highlight: | Low Capacitance Silicon Photodiodes,S1337-66BR Silicon Photodiodes,S1337-33BR Silicon Photodiodes |
Silicon photodiodes S1337-66BR
It is suitable for precise photometry in the ultraviolet to infrared band
Features
- Low capacitance
Maximum Sensitivity Wavelength (Typical) | 960 nm |
Light sensitivity (typical) | 0.62 A/W |
Rise Time (Typical) | 1 μs |
Junction Capacitance (typical) | 380 pF |
Noise equivalent power (typical) | 1.0×10-14 W/Hz1/2 |
Silicon photodiodes S1337-33BR
Features
- Low capacitance
Light-receiving side | 2.4 × 2.4 mm |
encapsulation | ceramics |
Light sensitivity (typical) | 0.62 A/W |
Dark current (max) | 30 pA |
Rise Time (Typical) | 0.2 μs |
Junction Capacitance (typical) | 65 pF |
Contact Person: Miss. Xu
Tel: 86+13352990255