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Product Details:
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| Light-receiving Side: | 10 × 10 Mm | Encapsulation: | Ceramics |
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| Refrigeration: | Non-cooled | Reverse Voltage (max): | 5 V |
| Spectral Response Range: | 190 To 1100 Nm | Dark Current (max): | 200 PA |
| Highlight: | Low Capacitance Silicon Photodiodes,S1337-1010BR Silicon Photodiodes,S1337-1010BQ Silicon Photodiodes |
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Silicon photodiodes S1337-1010BQ
It is suitable for precise photometry in the ultraviolet to infrared band
Features
- High UV sensitivity: QE 75% (λ=200 nm)
- Low capacitance
| Maximum Sensitivity Wavelength (Typical) | 960 nm |
| Light sensitivity (typical) | 0.5 A/W |
| Rise Time (Typical) | 3 μs |
| Junction Capacitance (typical) | 1100 pF |
| Noise equivalent power (typical) | 1.8×10-14 W/Hz1/2 |
Silicon photodiodes S1337-1010BR
It is suitable for precise photometry in the ultraviolet to infrared band
Features
- Low capacitance
| Light-receiving side | 10 × 10 mm |
| encapsulation | ceramics |
| Spectral response range | 340 to 1100 nm |
| Maximum Sensitivity Wavelength (Typical) | 960 nm |
| Light sensitivity (typical) | 0.62 A/W |
| Dark current (max) | 200 pA |
Contact Person: Miss. Xu
Tel: 86+13352990255
