Product Details:
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Light-receiving Side: | 5.8 × 5.8 Mm | Encapsulation: | Ceramics |
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Refrigeration: | Non-cooled | Reverse Voltage (max): | 5 V |
Spectral Response Range: | 190 To 1000 Nm | Light Sensitivity (typical): | 0.36 A/W |
Highlight: | S1227-66BQ Silicon Photodiodes,Suppressed IR Sensitivity Silicon Photodiodes,S1227-66BR Silicon Photodiodes |
Silicon photodiodes S1227-66BQ
Features
- High UV sensitivity (quartz window type): QE = 75 % (λ = 200 nm)
- Suppressed IR sensitivity
- Low dark current
Noise equivalent power (typical) | 5.0×10-15 W/Hz1/2 |
Junction Capacitance (typical) | 950 pF |
Rise Time (Typical) | 2 μs |
Dark current (max) | 20 pA |
Light sensitivity (typical) | 0.36 A/W |
Silicon photodiodes S1227-66BR
It is suitable for precise photometry in the ultraviolet to visible wavelength band; Suppresses infrared sensitivity
Features
- Resin potting
type - Suppression of infrared sensitivity
- Low dark current
Light-receiving side | 5.8 × 5.8 mm |
encapsulation | ceramics |
refrigeration | Non-cooled |
Reverse voltage (max) | 5 V |
Spectral response range | 340 to 1000 nm |
Maximum Sensitivity Wavelength (Typical) | 720 nm |
Contact Person: Miss. Xu
Tel: 86+13352990255