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Product Details:
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| Refrigeration: | Non-cooled Type | Spectral Response Range: | 320 To 1100 Nm |
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| Maximum Sensitivity Wavelength: | (Typical Value) 960 Nm | Photosensitive Sensitivity (typical Value): | 0.58 A/W |
| Dark Current (maximum Value): | 10 PA | Rise Time (typical Value): | 2.5 μs |
| Highlight: | YJJ S16838-02MS Silicon Photodiode,1100 nm Silicon Photodiode,320 nm Silicon Photodiode |
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S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter
Specification Description
Low dark current, pre-molded packaging
These photodiodes provide low dark current for high-precision measurement from low illumination to high illumination. Pre-molded packaging is designed to block stray light from the sides and back of the package to the light-receiving surface.
Characteristics
-S16838-01MS: Applicable to the visible light band
-S16838 /S16840-02MS: Applicable to the visible light to infrared band
-S16765-01MS: Applicable to the visible light to near-infrared band
Detailed parameters
The illuminated surface is 2.8 × 2.4 mm
Encapsulation plastic
Encapsulation category
Refrigerated non-cooled type
The spectral response range is 320 to 1100 nm
The maximum sensitivity wavelength (typical value) is 960 nm
Photosensitive sensitivity (typical value) : 0.58 A/W
Dark current (maximum value) 10 pA
Rise time (typical value) 2.5 μs
Junction capacitance (typical value) : 700 pF
Measurement conditions: Ta = 25°C, typical values, photosensitive sensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise specified
Specifications:
| spectral response range | 320 to 1100 nm |
| Illuminated surface | 2.8 × 2.4 mm |
| Photosensitive sensitivity | 0.58 A/W |
| Dark current (maximum value) | 10 pA |
Contact Person: Miss. Xu
Tel: 86+13352990255
