Product Details:
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Reverse Voltage: | 10V | Power Dissipation: | 300mW |
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Junction Temperature: | 125℃ | Operating Temperature Range: | - 40 To + 125℃ |
Storage Temperature Range: | - 40 To + 125℃ | Soldering Temperature: | 260℃ |
Highlight: | Planar silicon PN photodiode low dark current,TO-5 package photodiode infrared sensor,BPW21R photodiode with warranty |
BPW21R Planar Silicon PN Photodiode Low Dark Current TO-5 Package
FEATURES
• Package type: leaded
• Package form: TO-5
• Dimensions (in mm): Ø 8.13
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• Adapted to human eye responsivity
• Angle of half sensitivity: ϕ = ± 50°
• Hermetically sealed package
• Cathode connected to package
• Flat glass window
• Low dark current
• High shunt resistance
• High linearity
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
APPLICATIONS
• Sensor in exposure and color measuring purposes
Specification:
Forward voltage | 1.0-1.3V |
Breakdown voltage | 10V |
Reverse dark current | 2-30nA |
Diode capacitance | 1.2nF |
Dark resistance | 38GΩ |
Contact Person: Xu
Tel: 86+13352990255