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Product Details:
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| Package Type: | TO - 18 | Photosensitive Area: | φ0.3 Mm |
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| Spectral Response Range: | 0.9 To 1.7 μm | Peak Sensitivity Wavelength (Typ.): | 1.55 μm |
| Photosensitivity (Typ.): | 1.1 A/W | Cut - Off Frequency (Typ.): | 600 MHz |
| Highlight: | Infrared photoelectric sensor for laser monitoring,InGaAs PIN photodiode sensor,Laser monitoring system photoelectric sensor |
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G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems
1. Application Areas:
2. Key Features:
| Sensor Type | InGaAs PIN Photodiode | - |
| Package Type | TO-18 | - |
| Operation Mode | Photoconductive | - |
| Photosensitive Area Diameter | φ0.3 mm | - |
| Number of Elements | 1 | - |
| Cooling Method | Non-cooled | - |
| Spectral Response Range | 0.9 – 1.7 μm | - |
| Peak Sensitivity Wavelength | ~1.55 μm | - |
| Photosensitivity | Typ. 1.1 A/W | λ = 1.55 μm, Vₐ = 5V |
| Dark Current | Max. 0.5 nA | Vᵣ = 5V, Tₐ = 25℃, No light |
| Cut-off Frequency (-3dB) | Typ. 600 MHz | Vᵣ = 5V, Rₗ = 50Ω, λ = 1.3 μm |
| Junction Capacitance | Typ. 5 pF | Vᵣ = 5V, f = 1 MHz |
| Noise Equivalent Power (NEP) | Typ. 4.2×10⁻¹⁵ W/Hz¹/² | λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
| Detectivity (D*) | Typ. 6.3×10¹² cm·Hz¹/²/W | λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
| Shunt Resistance | 200 – 1000 MΩ | Vᵣ = 0V, Tₐ = 25℃, No light |
| Maximum Reverse Voltage (Vᵣₘₐₓ) | 20 V | Tₐ = 25℃ |
| Window Material | Borosilicate Glass | - |
| Operating Temperature Range | -40℃ – 100℃ | - |
| Storage Temperature Range | -55℃ – 125℃ | - |
| Temperature Coefficient of Sensitivity | 1.09 times/℃ |
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Contact Person: Miss. Xu
Tel: 86+13352990255