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G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems

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G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems

G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems
G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems

Large Image :  G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems

Product Details:
Place of Origin: Japan
Model Number: G12180-003A
Payment & Shipping Terms:
Minimum Order Quantity: 1PCS
Price: Negotiable
Packaging Details: Standard packaging
Delivery Time: 5-8 work days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 5000PCS

G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems

Description
Package Type: TO - 18 Photosensitive Area: φ0.3 Mm
Spectral Response Range: 0.9 To 1.7 μm Peak Sensitivity Wavelength (Typ.): 1.55 μm
Photosensitivity (Typ.): 1.1 A/W Cut - Off Frequency (Typ.): 600 MHz
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Infrared photoelectric sensor for laser monitoring

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InGaAs PIN photodiode sensor

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Laser monitoring system photoelectric sensor

 

 

                   G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems

 

1. Application Areas:

  • Laser Monitoring Systems: Enables real-time detection and monitoring of laser output intensity in industrial laser processing, medical laser equipment, and research-grade laser setups, ensuring stable laser performance.
  • Optical Power Meters: Serves as a core sensing component in optical power measurement devices, accurately capturing near-infrared (NIR) optical power signals for applications like fiber optic testing and laboratory photometry.
  • Laser Diode Life-Cycle Testing: Withstands long-term operation and maintains consistent responsiveness, making it suitable for evaluating the durability and performance degradation of laser diodes over their service life.
  • Near-Infrared (NIR) Photometry: Facilitates precise measurement of NIR light absorption, transmission, or reflection in fields such as biochemical analysis, material science, and environmental monitoring.
  • Optical Communication Systems: Detects high-speed NIR optical signals (e.g., in 1.3 μm or 1.55 μm wavelength bands) for use in fiber optic communication transceivers, ensuring reliable data transmission in telecom networks.

2. Key Features:

  • Broad NIR Spectral Response: Operates across a wavelength range of 0.9–1.7 μm, covering critical bands for optical communications, laser applications, and NIR photometry.
  • High Sensitivity: Delivers a typical photosensitivity of 1.1 A/W (at peak wavelength ~1.55 μm), enabling accurate detection of low-intensity NIR optical signals.
  • Low Dark Current: Features a maximum dark current of 0.5 nA (under reverse voltage VR = 5V), minimizing background noise and improving signal-to-noise ratio (SNR) for precise measurements.
  • High-Speed Performance: Boasts a typical cut-off frequency of 600 MHz, supporting high-speed signal detection for applications like fast optical communication or laser pulse monitoring.
  • Compact & Robust Package: Housed in a TO-18 package (a standard, compact metal package), ensuring mechanical stability, easy integration into circuit designs, and compatibility with standard optical mounting setups.
  • Wide Operating Temperature Range: Functions reliably in temperatures from -40°C to 100°C, making it suitable for harsh industrial environments or outdoor applications.
  • Low Junction Capacitance: Has a typical junction capacitance of 5 pF (VR = 5V), reducing signal distortion and enhancing high-frequency performance.
Sensor Type InGaAs PIN Photodiode -
Package Type TO-18 -
Operation Mode Photoconductive -
Photosensitive Area Diameter φ0.3 mm -
Number of Elements 1 -
Cooling Method Non-cooled -
Spectral Response Range 0.9 – 1.7 μm -
Peak Sensitivity Wavelength ~1.55 μm -
Photosensitivity Typ. 1.1 A/W λ = 1.55 μm, Vₐ = 5V
Dark Current Max. 0.5 nA Vᵣ = 5V, Tₐ = 25℃, No light
Cut-off Frequency (-3dB) Typ. 600 MHz Vᵣ = 5V, Rₗ = 50Ω, λ = 1.3 μm
Junction Capacitance Typ. 5 pF Vᵣ = 5V, f = 1 MHz
Noise Equivalent Power (NEP) Typ. 4.2×10⁻¹⁵ W/Hz¹/² λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃
Detectivity (D*) Typ. 6.3×10¹² cm·Hz¹/²/W λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃
Shunt Resistance 200 – 1000 MΩ Vᵣ = 0V, Tₐ = 25℃, No light
Maximum Reverse Voltage (Vᵣₘₐₓ) 20 V Tₐ = 25℃
Window Material Borosilicate Glass -
Operating Temperature Range -40℃ – 100℃ -
Storage Temperature Range -55℃ – 125℃ -
Temperature Coefficient of Sensitivity 1.09 times/℃  

 

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Tel: 86+13352990255

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