Product Details:
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Package Type: | TO - 18 | Photosensitive Area: | φ0.3 Mm |
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Spectral Response Range: | 0.9 To 1.7 μm | Peak Sensitivity Wavelength (Typ.): | 1.55 μm |
Photosensitivity (Typ.): | 1.1 A/W | Cut - Off Frequency (Typ.): | 600 MHz |
Highlight: | Infrared photoelectric sensor for laser monitoring,InGaAs PIN photodiode sensor,Laser monitoring system photoelectric sensor |
G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems
1. Application Areas:
2. Key Features:
Sensor Type | InGaAs PIN Photodiode | - |
Package Type | TO-18 | - |
Operation Mode | Photoconductive | - |
Photosensitive Area Diameter | φ0.3 mm | - |
Number of Elements | 1 | - |
Cooling Method | Non-cooled | - |
Spectral Response Range | 0.9 – 1.7 μm | - |
Peak Sensitivity Wavelength | ~1.55 μm | - |
Photosensitivity | Typ. 1.1 A/W | λ = 1.55 μm, Vₐ = 5V |
Dark Current | Max. 0.5 nA | Vᵣ = 5V, Tₐ = 25℃, No light |
Cut-off Frequency (-3dB) | Typ. 600 MHz | Vᵣ = 5V, Rₗ = 50Ω, λ = 1.3 μm |
Junction Capacitance | Typ. 5 pF | Vᵣ = 5V, f = 1 MHz |
Noise Equivalent Power (NEP) | Typ. 4.2×10⁻¹⁵ W/Hz¹/² | λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
Detectivity (D*) | Typ. 6.3×10¹² cm·Hz¹/²/W | λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
Shunt Resistance | 200 – 1000 MΩ | Vᵣ = 0V, Tₐ = 25℃, No light |
Maximum Reverse Voltage (Vᵣₘₐₓ) | 20 V | Tₐ = 25℃ |
Window Material | Borosilicate Glass | - |
Operating Temperature Range | -40℃ – 100℃ | - |
Storage Temperature Range | -55℃ – 125℃ | - |
Temperature Coefficient of Sensitivity | 1.09 times/℃ |
Contact Person: Miss. Xu
Tel: 86+13352990255