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G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems

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G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems

G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems
G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems

Large Image :  G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems

Product Details:
Place of Origin: Japan
Model Number: G12181-003A
Payment & Shipping Terms:
Minimum Order Quantity: 1PCS
Price: Negotiable
Packaging Details: Standard packaging
Delivery Time: 5-8 work days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 5000PCS

G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems

Description
Temperature Coefficient Of Sensitivity: 1.08 Times/℃ Storage Temperature Range: -55℃ – 125℃
Operating Temperature Range: -40℃ – 100℃ Maximum Reverse Voltage (Vᵣₘₐₓ): 20 V
Shunt Resistance: 300~1200 MΩ Junction Capacitance: Typ. 4 PF
Highlight:

Infrared photoelectric sensor for optical communication

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InGaAs PIN photodiode sensor

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Photoelectric sensor with InGaAs technology

 

             G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems   

 

Application Areas:

  • Optical Communication Systems: Detects high-speed NIR signals (1.3/1.55 μm bands) in fiber optic transceivers, supporting reliable data transmission in telecom networks.
  • Precision Optical Power Meters: Serves as a core sensing component for measuring NIR optical power in laboratory testing, fiber optic maintenance, and laser calibration.
  • Laser Monitoring & Testing: Enables real-time monitoring of laser output intensity (e.g., in industrial lasers, medical lasers) and life-cycle testing of laser diodes.
  • Near-Infrared Photometry: Used in biochemical analysis, material science, and environmental monitoring to measure NIR light absorption, transmission, or reflection.
  • Aerospace & Defense: Suitable for NIR-based target detection, remote sensing, and optical guidance systems (thanks to wide temperature range and low noise).

Key Features:

  • Broad NIR Coverage: 0.9–1.7 μm spectral range aligns with key wavelengths for communication, laser, and photometry applications.
  • Ultra-Low Dark Current: Max. 0.3 nA dark current minimizes background noise, ensuring high signal-to-noise ratio (SNR) for low-light detection.
  • High-Speed Response: 800 MHz cut-off frequency supports fast signal detection, ideal for high-bandwidth optical communication or pulsed laser monitoring.
  • Compact & Durable Package: TO-18 metal package offers mechanical stability, easy integration into circuits, and compatibility with standard optical mounts.
  • Consistent Sensitivity: Low temperature coefficient of sensitivity ensures reliable performance across varying ambient temperatures.

Parameter

Specification (Typ. / Max.)

Test Conditions

Photosensitive Area φ0.3 mm -
Number of Sensing Elements 1 (Single-Element) -
Cooling Method Non-cooled (Passive Ambient Cooling) -
Spectral Response Range 0.9 – 1.7 μm Covers critical NIR bands (e.g., 1.3/1.55 μm for telecom)
Peak Sensitivity Wavelength ~1.55 μm -
Photosensitivity Typ. 1.1 A/W λ = 1.55 μm, Reverse Voltage (Vᵣ) = 5V, Tₐ = 25℃
Dark Current Max. 0.3 nA Vᵣ = 5V, Tₐ = 25℃, No Incident Light
Cut-off Frequency (-3dB) Typ. 800 MHz Vᵣ = 5V, Load Resistance (Rₗ) = 50Ω, λ = 1.3 μm
Junction Capacitance Typ. 4 pF Vᵣ = 5V, Frequency (f) = 1 MHz
Noise Equivalent Power (NEP) Typ. 3.5×10⁻¹⁵ W/Hz¹/² λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃
Detectivity (D*) Typ. 7.2×10¹² cm·Hz¹/²/W λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃
Shunt Resistance 300 – 1200 MΩ Vᵣ = 0V, Tₐ = 25℃, No Light
Maximum Reverse Voltage (Vᵣₘₐₓ) 20 V Tₐ = 25℃
Operating Temperature Range -40℃ – 100℃ Stable performance in harsh industrial environments
Storage Temperature Range -55℃ – 125℃ -
Temperature Coefficient of Sensitivity 1.08 times/℃ Relative to 25℃, λ = 1.55 μm

 

G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems 0

 

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Miss. Xu

Tel: 86+13352990255

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