Product Details:
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Temperature Coefficient Of Sensitivity: | 1.08 Times/℃ | Storage Temperature Range: | -55℃ – 125℃ |
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Operating Temperature Range: | -40℃ – 100℃ | Maximum Reverse Voltage (Vᵣₘₐₓ): | 20 V |
Shunt Resistance: | 300~1200 MΩ | Junction Capacitance: | Typ. 4 PF |
Highlight: | Infrared photoelectric sensor for optical communication,InGaAs PIN photodiode sensor,Photoelectric sensor with InGaAs technology |
G12181-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Optical Communication Systems
Application Areas:
Key Features:
Parameter |
Specification (Typ. / Max.) |
Test Conditions |
---|---|---|
Photosensitive Area | φ0.3 mm | - |
Number of Sensing Elements | 1 (Single-Element) | - |
Cooling Method | Non-cooled (Passive Ambient Cooling) | - |
Spectral Response Range | 0.9 – 1.7 μm | Covers critical NIR bands (e.g., 1.3/1.55 μm for telecom) |
Peak Sensitivity Wavelength | ~1.55 μm | - |
Photosensitivity | Typ. 1.1 A/W | λ = 1.55 μm, Reverse Voltage (Vᵣ) = 5V, Tₐ = 25℃ |
Dark Current | Max. 0.3 nA | Vᵣ = 5V, Tₐ = 25℃, No Incident Light |
Cut-off Frequency (-3dB) | Typ. 800 MHz | Vᵣ = 5V, Load Resistance (Rₗ) = 50Ω, λ = 1.3 μm |
Junction Capacitance | Typ. 4 pF | Vᵣ = 5V, Frequency (f) = 1 MHz |
Noise Equivalent Power (NEP) | Typ. 3.5×10⁻¹⁵ W/Hz¹/² | λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
Detectivity (D*) | Typ. 7.2×10¹² cm·Hz¹/²/W | λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
Shunt Resistance | 300 – 1200 MΩ | Vᵣ = 0V, Tₐ = 25℃, No Light |
Maximum Reverse Voltage (Vᵣₘₐₓ) | 20 V | Tₐ = 25℃ |
Operating Temperature Range | -40℃ – 100℃ | Stable performance in harsh industrial environments |
Storage Temperature Range | -55℃ – 125℃ | - |
Temperature Coefficient of Sensitivity | 1.08 times/℃ | Relative to 25℃, λ = 1.55 μm |
Contact Person: Miss. Xu
Tel: 86+13352990255