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YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared

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YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared

YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared

Large Image :  YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared

Product Details:
Place of Origin: USA
Brand Name: YJJ
Model Number: G12183-003K
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: Negotiable
Packaging Details: Palletized
Delivery Time: 5-8 days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 1500

YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared

Description
Spectral Range: 0.9 ~ 2.6 μm Peak Wavelength: 2.3 μm
Response Rate (λp): 1.0 ~ 1.3 A/W Dark Current ID: 0.4 μA (typical)
Diode Capacitance Cj: 50–100 PF Cut-off Frequency: 20–50 MHz
Operating Temperature: -40℃ ~ +85℃ Noise Equivalent Power NEP: ~4–9×10
Highlight:

InGaAsPIN photodiode high-speed optical detection

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Near-infrared photodiode long-wave infrared

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Infrared photoelectric sensor InGaAsPIN

Product Description:

YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared

 

Features:

Sensitive area: φ1mm

Product characteristics

Low noise

Low junction capacitance

Low dark current

Sensitive area: φ1mm

Detailed parameter

The sensitive area is φ1mm

The number of pixels is 1

Encapsulation Metal

Encapsulation type: TO-18

Cooling mode Non-cooled

Spectral response range is 0.9 to 1.7 μm

The peak sensitivity wavelength (typical value) is 1.55 μm

Light sensitivity (typical value) 1.1 A/W

Dark current (Max.) 4 nA

Cut-off frequency (typical value) 60 MHz

Junction capacitance (typical value) 55 pF

Noise equivalent power (typical value) 1.4×10-14 W/Hz1/2

Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR= 5V, Cutoff frequency: VR= 5V, RL= 50Ω, -3 dB, Terminal capacitance: VR= 5V, f= 1MHz.

 

 

Specifications:

Photosensitive area 0.2mm
The encapsulation type is TO-18
Peak sensitivity wavelength (typical value) 800 nm
spectral response range is 400 to 1000 nm
Photosensitive area 0.2mm

YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared 0

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Miss. Xu

Tel: 86+13352990255

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