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Product Details:
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| Spectral Range: | 0.9 ~ 2.6 μm | Peak Wavelength: | 2.3 μm |
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| Response Rate (λp): | 1.0 ~ 1.3 A/W | Dark Current ID: | 0.4 μA (typical) |
| Diode Capacitance Cj: | 50–100 PF | Cut-off Frequency: | 20–50 MHz |
| Operating Temperature: | -40℃ ~ +85℃ | Noise Equivalent Power NEP: | ~4–9×10 |
| Highlight: | InGaAsPIN photodiode high-speed optical detection,Near-infrared photodiode long-wave infrared,Infrared photoelectric sensor InGaAsPIN |
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Product Description:
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
Features:
Sensitive area: φ1mm
Product characteristics
Low noise
Low junction capacitance
Low dark current
Sensitive area: φ1mm
Detailed parameter
The sensitive area is φ1mm
The number of pixels is 1
Encapsulation Metal
Encapsulation type: TO-18
Cooling mode Non-cooled
Spectral response range is 0.9 to 1.7 μm
The peak sensitivity wavelength (typical value) is 1.55 μm
Light sensitivity (typical value) 1.1 A/W
Dark current (Max.) 4 nA
Cut-off frequency (typical value) 60 MHz
Junction capacitance (typical value) 55 pF
Noise equivalent power (typical value) 1.4×10-14 W/Hz1/2
Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR= 5V, Cutoff frequency: VR= 5V, RL= 50Ω, -3 dB, Terminal capacitance: VR= 5V, f= 1MHz.
Specifications:
| Photosensitive area | 0.2mm |
| The encapsulation type is | TO-18 |
| Peak sensitivity wavelength (typical value) | 800 nm |
| spectral response range is | 400 to 1000 nm |
| Photosensitive area | 0.2mm |
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Contact Person: Miss. Xu
Tel: 86+13352990255