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S12023-02 Low Bias Operation Infrared Si APD High Speed Response

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S12023-02 Low Bias Operation Infrared Si APD High Speed Response

S12023-02 Low Bias Operation Infrared Si APD High Speed Response
S12023-02 Low Bias Operation Infrared Si APD High Speed Response S12023-02 Low Bias Operation Infrared Si APD High Speed Response S12023-02 Low Bias Operation Infrared Si APD High Speed Response S12023-02 Low Bias Operation Infrared Si APD High Speed Response S12023-02 Low Bias Operation Infrared Si APD High Speed Response

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Product Details:
Place of Origin: Japan
Brand Name: Hamamatsu
Model Number: S12023-02
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: Negotiable
Packaging Details: Standard Box
Delivery Time: 3-5work days
Payment Terms: L/C, D/A, D/P, T/T, Western Union
Supply Ability: 1000PCS/Month

S12023-02 Low Bias Operation Infrared Si APD High Speed Response

Description
Photosensitive Area: φ0.2 Mm Package: Metal
Package Category: TO-18 Peak Sensitivity Wavelength (typ.): 800 Nm
Highlight:

low bias infrared Si APD

,

high speed infrared photoelectric sensor

,

infrared APD with high speed response

S12023-02 Low Bias Operation Infrared Si APD High Speed Response

 

Low bias operation, for 800 nm band
This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders.


Features
- Stable operation at low bias
- High-speed response
- High sensitivity and low noise

 

Specification:

Spectral response range
400 to 1000 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 0.5 nA
Cutoff frequency (typ.) 1000 MHz
Terminal capacitance (typ.) 1 pF
Breakdown voltage (typ.) 150 V
Temperature coefficient of breakdown voltage (typ.) 0.65 V/℃
Gain (typ.) 100

 

S12023-02 Low Bias Operation Infrared Si APD High Speed Response 0

Contact Details
ShenzhenYijiajie Electronic Co., Ltd.

Contact Person: Xu

Tel: 86+13352990255

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