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S12023-02-01 Silicon Avalanche Photodiode Infrared Low-bias Operation

Name: S12023-02-01 Silicon Avalanche Photodiode Infrared Low-bias Operation
Brand: ShenzhenYijiajie Electronic Co., Ltd.
SKU: S12023-02-01
Price: 18.00 USD
Availability: InStock

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S12023-02-01 Silicon Avalanche Photodiode Infrared Low-bias Operation

Large Image : S12023-02-01 Silicon Avalanche Photodiode Infrared Low-bias Operation

Product Details:

Place of Origin:	Japan
Brand Name:	Hamamatsu
Model Number:	S12023-02-01

Payment & Shipping Terms:

Minimum Order Quantity:	1
Price:	Negotiable
Packaging Details:	Standard Package
Delivery Time:	3-5Workingdays
Payment Terms:	L/C, D/A, D/P, T/T
Supply Ability:	10000pcs/Month

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S12023-02-01 Silicon Avalanche Photodiode Infrared Low-bias Operation

Description

Type:

Near-infrared (low-bias Operation)

Active Area Size:

φ0.2 Mm

Package Material:

Metal

Package Type:

TO-18

Highlight:

Silicon Avalanche Photodiode infrared sensor

Low-bias operation infrared photodiode

Infrared photoelectric sensor with warranty

S12023-02-01 Silicon Avalanche Photodiode Infrared Low-bias Operation

This silicon avalanche photodiode (Si APD) is designed for the near-infrared range (800 nm band) and operates at low voltages of 200 V or less. It is suitable for applications such as optical rangefinders and free-space optical communication.

Features:
・Stable operation at low bias voltage
・Fast response speed
・High sensitivity and low noise

Specification:

Wavelength of peak sensitivity (typical)	800 nm
Wavelength range of sensitivity	400–1000 nm
Photosensitivity (typical)	0.5 A/W
Maximum dark current	0.5 nA
Cut-off frequency (typical)	1000 MHz
Typical terminal capacitance	1 pF
Breakdown voltage (typical)	150 V
Breakdown voltage temperature coefficient (typical)	0.65 V/°C
Multiplication factor (typical)	100

S12023-02-01 Silicon Avalanche Photodiode Infrared Low-bias Operation

Tag:

Contact Person: Xu

Tel: 86+13352990255

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