China Infrared Photoelectric Sensor

S2386-18K Si Photodiodes For Visible to Near IR General Purpose Photometry High Sensitivity

Package:TO-18

Reverse Voltage:30V

Operating Temperature:-40 to +100℃
S1337-1010BR Si Photodiode For UV to IR Precision Photometry Low Capacitance

Window Material:Resin Potting

Package:15*16.5mm

Photosensitive are size:10*10mm
BPW21R Planar Silicon PN Photodiode Low Dark Current TO-5 Package

Reverse voltage:10V

Power dissipation:300mW

Junction temperature:125℃
Silicon Pin Photodiodes S1336-8BK S1336-8BQ High Sensitivity In The Ultraviolet Band

Light-receiving side:5.8 × 5.8 mm

encapsulation:metal

Package Category:TO-8
Silicon Pin Photodiodes S1336-18BK S1336-18BQ Low Capacitance

Light-receiving side:1.1 × 1.1 mm

encapsulation:metal

Package Category:TO-18
Silicon Pin Photodiodes S1336-5BK S1336-5BQ High Sensitivity In The Ultraviolet Band

Light-receiving side:2.4 × 2.4 mm

encapsulation:metal

Package Category:TO-5
Silicon Pin Photodiode S1336-44BQ S1336-44BK High Sensitivity In The Ultraviolet Band

Light-receiving side:3.6 × 3.6 mm

encapsulation:metal

Package Category:TO-5
AS907CCA Infrared Thermopile Sensor TO-46 Packing Differential Voltage Output

Chip size:1.5×1.5 mm2

Sensitive area:1.0×1.0 mm2

Detection angle:FOV 87°
LHI778 Infrared Thermoelectric Sensor For Human - body Movement Detectors

Minimum Responsivity (Rmin):3.3

Typical Responsivity (Rtyp):4.2

Maximum Match (Mmax):10
High Sensitivity T15770 Infrared Photoelectric Sensor for Photosensitive Applications

Spectral Response:4.45 μm

Package:TO - 18 metal package

Photosensitive Area:1.2 x 1.2 mm
High Precision Packaging Non-Cooled Type S16765-01MS Infrared Photoelectric Sensor with Low Dark Current and 0.5 μs Rise Time

Photosensitive Area:2.8 × 2.4 mm

Number of Pixels:1

Cooling Method:Non - cooled type
YJJ S1226-5BQ Silicon Photodiode Is Used For Precise Photometric Determination In The Ultraviolet To Visible Light Band

Light receiving surface:2.4 × 2.4mm

Dark current (maximum):5 PA

With:Lens

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Infrared Photoelectric Sensor

China Infrared Photoelectric Sensor

S2386-18K Si Photodiodes For Visible to Near IR General Purpose Photometry High Sensitivity

S1337-1010BR Si Photodiode For UV to IR Precision Photometry Low Capacitance

BPW21R Planar Silicon PN Photodiode Low Dark Current TO-5 Package

Silicon Pin Photodiodes S1336-8BK S1336-8BQ High Sensitivity In The Ultraviolet Band

Silicon Pin Photodiodes S1336-18BK S1336-18BQ Low Capacitance

Silicon Pin Photodiodes S1336-5BK S1336-5BQ High Sensitivity In The Ultraviolet Band

Silicon Pin Photodiode S1336-44BQ S1336-44BK High Sensitivity In The Ultraviolet Band

AS907CCA Infrared Thermopile Sensor TO-46 Packing Differential Voltage Output

LHI778 Infrared Thermoelectric Sensor For Human - body Movement Detectors

High Sensitivity T15770 Infrared Photoelectric Sensor for Photosensitive Applications

High Precision Packaging Non-Cooled Type S16765-01MS Infrared Photoelectric Sensor with Low Dark Current and 0.5 μs Rise Time

YJJ S1226-5BQ Silicon Photodiode Is Used For Precise Photometric Determination In The Ultraviolet To Visible Light Band

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