China Infrared Photoelectric Sensor

S6775 S6775-01 Silicon PIN Photodiode High-speed Response

Light-receiving side:5.5 × 4.8 mm

encapsulation:plastics

refrigeration:Non-cooled
UVTRON R9533 Easy Installation in Most Devices with High Sensitivity and Wide Field of View Using Ni Electrode Material

Electrode material:Ni

weight:2.5 g

[Maximum Rating]:30 mA
Silicon Photodiodes S12742-254 Silicon Photodiode With Interference Filter

Light-receiving side:3.6 × 3.6 mm

encapsulation:metal

Package Category:TO-5 with filter
Silicon PIN Photodiode S3071 S3072 For Space Light Transmission (free-space optics)

Light-receiving side:φ5.0 mm

encapsulation:metal

Package Category:TO-8
Plastics Encapsulated Color Sensor S9706 Simultaneous Measurement Of RGB Tri-color -20 to 85 degrees Celsius

Product type:RGB digital color sensor

Encapsulation material:plastics

Package type:Surface mount type
S12915-33R Silicon Photodiode Sensor For General Photometer Low Dark Current

receiving surface size is:2.4 × 2.4mm

Effective photosensitive area:5.7 mm2

maximum reverse voltage is:30 V
YJJ G12180-005A InGaAs PIN Photodiode Receiving Surface: φ0.5mm

Receiving surface:φ0.5mm

Number of pixels:1

Package:Metal
YJJ S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment

Low crosstalk: maximum:2%

Wide spectral response range:190 to 1000 nm

High-speed response:fc = 20 MHz -TO-5 metal package
YJJ S6775-01 Silicon PIN Photodiode Plastic SIP Single-in-line package 5.5 × 4.8mm Receiving Surface

Plastic package:7 × 7.8mm

Receiving surface size:5.5 × 4.8mm

Refrigeration:Uncooled type
YJJ S12053-02 Silicon APD Avalanche Photodiode Short Wavelength Type APD

Sensitivity wavelength range:200 to 1000 nm

Photosensitivity (typical value):0.42 A/W

Dark current (Max.):5 nA
YJJ S12060-02 Silicon APD Low Temperature Coefficient for 800 nm Band in Metal Encapsulation and TO18 Package

Receiving surface:φ0.2mm

Encapsulation:metal

Package category:TO18
YJJ S1337-21 Silicon Photodiode The Ideal Solution for Precision Photometry in UV to IR Bands

Receiving surface:18 × 18 mm

Reverse voltage (Max.):5 V

Sensitivity (typical value):0.52 A/W

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Infrared Photoelectric Sensor

China Infrared Photoelectric Sensor

S6775 S6775-01 Silicon PIN Photodiode High-speed Response

UVTRON R9533 Easy Installation in Most Devices with High Sensitivity and Wide Field of View Using Ni Electrode Material

Silicon Photodiodes S12742-254 Silicon Photodiode With Interference Filter

Silicon PIN Photodiode S3071 S3072 For Space Light Transmission (free-space optics)

Plastics Encapsulated Color Sensor S9706 Simultaneous Measurement Of RGB Tri-color -20 to 85 degrees Celsius

S12915-33R Silicon Photodiode Sensor For General Photometer Low Dark Current

YJJ G12180-005A InGaAs PIN Photodiode Receiving Surface: φ0.5mm

YJJ S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment

YJJ S6775-01 Silicon PIN Photodiode Plastic SIP Single-in-line package 5.5 × 4.8mm Receiving Surface

YJJ S12053-02 Silicon APD Avalanche Photodiode Short Wavelength Type APD

YJJ S12060-02 Silicon APD Low Temperature Coefficient for 800 nm Band in Metal Encapsulation and TO18 Package

YJJ S1337-21 Silicon Photodiode The Ideal Solution for Precision Photometry in UV to IR Bands

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Electrochemical Gas Sensor

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KE-25 KE-50 Electrochemical Oxygen Gas Sensor Greenhouse Use For Refrigeration

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